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参数资料
| 型号： | SK025R56 |
| 元件分类： | 晶闸管 |
| 英文描述： | 25 A, 1000 V, SCR, TO-220AB |
| 封装： | ROHS COMPLIANT, PLASTIC, TO-220R, 3 PIN |
| 文件页数： | 6/9页 |
| 文件大小： | 972K |
| 代理商： | SK025R56 |
274
Revised: November 1, 2010 05:04 PM
2010 Littelfuse, Inc
Teccor brand Thyristors
Specifications are subject to change without notice.
Please refer to http://www.littelfuse.com for current information.
20 / 25 Amp Standard SCRs
Sxx20x & Sxx25x Series
Soldering Parameters
Reflow Condition
Pb – Free assembly
Pre Heat
-Temperature Min (T
s(min))
150°C
-Temperature Max (T
s(max))
200°C
-Time (min to max) (t
s)
60 – 180 secs
Average ramp up rate (LiquidusTemp)
(T
L) to peak
5°C/second max
T
S(max) to TL - Ramp-up Rate
5°C/second max
Reflow
-Temperature (T
L) (Liquidus)
217°C
-Temperature (t
L)
60 – 150 seconds
PeakTemperature (T
P)
260+0/-5 °C
Time within 5°C of actual peak
Temperature (t
p)
20 – 40 seconds
Ramp-down Rate
5°C/second max
Time 25°C to peakTemperature (T
P)
8 minutes Max.
Do not exceed
280°C
Physical Specifications
Environmental Specifications
Test
Specifications and Conditions
AC Blocking
MIL-STD-750, M-1040, Cond A Applied
Peak AC voltage @ 125°C for 1008 hours
Temperature Cycling
MIL-STD-750, M-1051,
100 cycles; -40°C to +150°C;
15-min dwell-time
Temperature/
Humidity
EIA / JEDEC, JESD22-A101
1008 hours; 320V - DC: 85°C;
85% rel humidity
High Temp Storage
MIL-STD-750, M-1031,
1008 hours; 150°C
Low-Temp Storage
1008 hours; -40°C
Thermal Shock
MIL-STD-750, M-1056
10 cycles; 0°C to 100°C; 5-min dwelltime
at each temperature; 10 sec (max) transfer
time between temperature
Autoclave
EIA / JEDEC, JESD22-A102
168 hours (121°C at 2 ATMs) and
100% R/H
Resistance to
Solder Heat
MIL-STD-750 Method 2031
Solderability
ANSI/J-STD-002, category 3, Test A
Lead Bend
MIL-STD-750, M-2036 Cond E
Terminal Finish
100% Matte Tin-plated
Body Material
UL recognized epoxy meeting flammability
classification 94V-0
Lead Material
Copper Alloy
Design Considerations
Careful selection of the correct device for the application’s
operating parameters and environment will go a long way
toward extending the operating life of the Thyristor. Good
design practice should limit the maximum continuous
current through the main terminals to 75% of the device
rating. Other ways to ensure long life for a power discrete
semiconductor are proper heat sinking and selection of
voltage ratings for worst case conditions. Overheating,
overvoltage (including dv/dt), and surge currents are
the main killers of semiconductors. Correct mounting,
soldering, and forming of the leads also help protect
against component damage.
Time
Te
mperatur
e
TP
TL
TS(max)
TS(min)
25
tP
tL
tS
time to peak temperature
Preheat
Ramp-up
Ramp-down
Ramp-do
相关PDF资料 |
PDF描述 |
|---|---|
| SK025RTP | 25 A, 1000 V, SCR, TO-220AB |
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| SK025N56TP | 25 A, 1000 V, SCR, TO-263AA |
| SK025N56 | 25 A, 1000 V, SCR, TO-263AA |
| SK025NRP | 25 A, 1000 V, SCR, TO-263AA |
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