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参数资料
| 型号： | SK35E |
| 元件分类： | 整流器 |
| 英文描述： | 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AB |
| 封装： | ROHS COMPLIANT, PLASTIC, SMC, 2 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 162K |
| 代理商： | SK35E |
PAGE . 2
November 2,2010-REV.05
SK32E ~ SK36E
RATING AND CHARACTERISTIC CURVES
Fig.2- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
Fig.4- MAXIMUM NON - REPETITIVE SURGE CURRENT
INST
ANT
ANEOUS
FOR
W
ARD
CURRENT
AMPERES
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
PEAK
FOR
W
ARD
SURGE
CURRENT
,
NO. OF CYCLE AT 60HZ
160
140
120
100
80
60
40
20
0
1
2
5
10
20
50
100
.4
.5
.6
.7
.8
.9 1.0 1.1
50
0.1
10
1.0
.3
.2
T= 25 C
Pulse Width = 300 s
1% Duty Cycle
J
O
m
50-60V
20-40V
Fig.3- TYPICAL REVERSE CHARACTERISTICS
INST
ANT
ANEOUS
REVERSE
CURRENT
,m
A
PERCENT OF INSTANTANEOUS REVERSE VOLTAGE,(%)
020406080
100
10
1.0
0.1
0.01
.001
T= 100 C
O
T= 75 C
O
T= 25 C
J
O
V
=20-40V
V
=50-60V
RRM
Fig.1- FORWARD CURRENT DERATING CURVE
5.0
4.0
2.0
0
RESISTIVEORINDUCTIVE LOAD
1.0
3.0
0
20406080
100
120
140
160
LEAD TEMPERATURE, C
O
=20-30V
=40-60V
A
VERAGE
FOR
W
ARD
RECTIFIED
CURRENT
AMPERES
相关PDF资料 |
PDF描述 |
|---|---|
| SK34ET/R13 | 3 A, 40 V, SILICON, RECTIFIER DIODE, DO-214AB |
| SK32ET/R7 | 3 A, 20 V, SILICON, RECTIFIER DIODE, DO-214AB |
| SK33E | 3 A, 30 V, SILICON, RECTIFIER DIODE, DO-214AB |
| SK3GD09 | 2 A, 900 V, SILICON, RECTIFIER DIODE |
| SK1GD06 | 1 A, 600 V, SILICON, SIGNAL DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SK35E_R2_00001 | 制造商:PanJit Touch Screens 功能描述: |
| SK35E3/TR13 | 制造商:Microsemi Corporation 功能描述:3.0A, 50V, VF=0.62V - Tape and Reel 制造商:Microsemi Corporation 功能描述:DIODE SCHOTTKY 3A 50V SMCJ |
| SK35GB12T4 | 制造商:SEMIKRON 制造商全称:Semikron International 功能描述:IGBT Module |
| SK35GD065ET | 制造商:SEMIKRON 功能描述:IGBT MODULE 600V 6 PACK 制造商:SEMIKRON 功能描述:POWER IGBT TRANSISTOR |
| SK35GD065ET_07 | 制造商:SEMIKRON 制造商全称:Semikron International 功能描述:3-phase bridge inverter |
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