- 您现在的位置：买卖IC网 > PDF目录54478 > SKN870/04 (SEMIKRON INTERNATIONAL) 1110 A, 400 V, SILICON, RECTIFIER DIODE, DO-200AB PDF资料下载
参数资料
| 型号： | SKN870/04 |
| 厂商： | SEMIKRON INTERNATIONAL |
| 元件分类： | 整流器 |
| 英文描述： | 1110 A, 400 V, SILICON, RECTIFIER DIODE, DO-200AB |
| 封装： | CAPSULE TYPE, METAL CERAMIC, DO-200AB, 2 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 709K |
| 代理商： | SKN870/04 |
by SEMIKRON
B 8 – 29
Rectifier Diodes
SKN 450
SKN 501
SKN 870
Features
Reverse voltages up to 3000 V
Capsule type metal-ceramic
packages with precious metal
pressure contacts
Contact diameters 19 and
32 mm
Typical Applications
All-purpose high power rectifier
diodes
SKN 870: High voltage grades
available for industrial high
power drives and medium
traction applications
Cooling via heatsinks
(double or single sided)
Non-controllable and
half-controllable rectifiers
Free-wheeling diodes
VRSM
IFAV (sin. 180; Tcase = 85
°C)
VRRM
V
500 A
720 A
1110 A
400
–
SKN 501/04
SKN 870/04
800
–
SKN 501/08
–
1200
–
SKN 501/12
SKN 870/12
1400
–
SKN 501/14
–
1600
–
SKN 501/16
SKN 870/16
1800
SKN 450/18
SKN 501/18
–
2000
SKN 450/20
–
2200
SKN 450/22
–
2400
–
SKN 870/24
Symbol Conditions
SKN 450
SKN 501
SKN 870
IFAV
sin. 180; DSC;
(Tcase = . . .)
450 A (95
°C) 500 A (125 °C) 870 A (105 °C)
IFSM
Tvj = 25
°C;
10 ms
6 000 A
7 000 A
13 000 A
Tvj max. ; 10 ms
5 000 A
6 000 A
10 500 A
i
2tTvj = 25 °C;
8,3 . . . 10 ms
180 000 A
2s
245 000 A
2s
850 000 A
2s
Tvj max. ;
8,3 . . . 10 ms
125 000 A
2s
180 000 A
2s
550 000 A
2s
Qrr
Tvj =140
°C;
700
C
600
C
2000
C
IFM = 500 A;
IRM
–
diF
dt
= 10
A
s
60 A
30 A
100 A
typ.
IR
Tvj = 25
°C;
VR = VRRM
2 mA
4 mA
Tvj max ;
VR = VRRM
20 mA
50 mA
40 mA
VF
Tvj = 25
°C;
1,8 V
1,65 V
1,85 V
(IF = . . .); max.
(1500 A)
(3000 A)
V(TO)
Tvj max.
0,85 V
0,80 V
0,85 V
rT
Tvj max.
0,7 m
0,6 m
0,33 m
Rthjc
DSC/SSC
0,075/0,15
°C/W
0,033/
(Double-sided
0,066
°C/W
Rthch
cooling/single
0,02/0,04
°C/W
0,007/
sided cooling)
0,014
°C/W
Tvj
– 40 ... + 150
°C – 40 ... + 180 °C – 40 ... + 150 °C
Tstg
– 40 ... + 150
°C – 40 ... + 180 °C – 40 ... + 150 °C
F
SI units
4 ... 5 kN
13,5 ... 16,5 kN
US units
900 ... 1100 lbs.
3000 ... 3500 lbs.
w
approx.
51 g
230 g
RC
PR = 2 W
1
F + 20
Rp
PR = 20 W
25 k
Case
E 18
E 19
相关PDF资料 |
PDF描述 |
|---|---|
| SKN501/16 | 720 A, 1600 V, SILICON, RECTIFIER DIODE, DO-200AA |
| SKNA102/50 | 125 A, SILICON, RECTIFIER DIODE |
| SKND105F12 | 102 A, 1200 V, SILICON, RECTIFIER DIODE, TO-240AA |
| SKND105F10 | 102 A, 1000 V, SILICON, RECTIFIER DIODE, TO-240AA |
| SKND150F11 | 140 A, 1100 V, SILICON, RECTIFIER DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SKN9 | 制造商:EIC 制造商全称:EIC discrete Semiconductors 功能描述:SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS |
| SKNA 102/36 | 制造商:SEMIKRON 功能描述:DIOD>100A |
| SKNA 102/45 | 制造商:SEMIKRON 功能描述:DIODE >100A |
| SKNA 102/48 | 制造商:SEMIKRON 功能描述:DIODE >100A |
| SKNA 102/50 | 制造商:SEMIKRON 功能描述:DIODE >100A |
发布紧急采购，3分钟左右您将得到回复。