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参数资料
| 型号： | SL05T3G |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, TO-236 |
| 封装： | LEAD FREE, PLASTIC, CASE 318-08, 3 PIN |
| 文件页数： | 3/5页 |
| 文件大小： | 132K |
| 代理商： | SL05T3G |
SL05T1 Series
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS
Device
Marking
VRWM
IR @ VRWM
Breakdown Voltage
(Note 4)
VC, Clamping Voltage
(Note 5)
Max
IPP
Capacitance
VBR @ 1 mA (Volts)
@ 1 A
@ 5 A
@ VR = 0 V, 1 MHz (pF)
(V)
(mA)
Min
Max
(V)
(A)
Typ
Max
SL05
L05
5.0
20
6.0
8.0
9.8
11
17
3.5
5.0
SL12
L12
12
1.0
13.3
15.5
19
24
12
3.5
5.0
SL15
L15
15
1.0
16.7
18.5
24
30
10
3.5
5.0
SL24
L24
24
1.0
26.7
29
43
55
5.0
3.5
5.0
4. VBR measured at pulse test current of 1 mA at an ambient temperature of 25°C
5. Surge current waveform per Figure 2
TYPICAL CHARACTERISTICS
0.1
10
Figure 1. Maximum Peak Power Rating
1
PULSE WIDTH (ms)
100
1000
1
0.1
0.01
Figure 2. 8 × 20 ms Pulse Waveform
P
PK
,PEAK
POWER
(kW)
100
90
80
70
60
50
40
30
20
10
0
020
40
60
t, TIME (ms)
%
OF
PEAK
PULSE
CURRENT
tP
tr
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
PEAK VALUE IRSM @ 8 ms
HALF VALUE IRSM/2 @ 20 ms
80
Figure 3. Typical Junction Capacitance
55
25
150
10
1
0.1
0.01
Figure 4. Typical Leakage Over Temperature
TEMPERATURE (°C)
@ 50% VRWM
4
3.5
3
2
1.5
0.5
0
C,
CAP
ACIT
ANCE
(pF),
1
MHz
FREQ.
2.5
1
@ ZERO BIAS
@ VRWM
SL05
SL15
SL24
LEAKAGE
(m
A)
SL05T1
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