参数资料
型号: SL1ICS3101U
厂商: NXP SEMICONDUCTORS
元件分类: 消费家电
英文描述: I.CODE1 Label IC 97pF Chip Specification
中文描述: SPECIALTY CONSUMER CIRCUIT, UUC4
封装: DIE-4
文件页数: 10/22页
文件大小: 373K
代理商: SL1ICS3101U
Product Specification
SL1 ICS31 01
Rev. 1.2
July 2000
Page 10 of 22
Public
7 Mechanical Wafer Specifications
For further information as described in the following chapters please refer to the following
Philips documents:
Dicing Guidelines for Thin Wafers (< 200 μm)
General Specification for 6” Wafer
In case of doubt or inconsistency with the following chapters the above mentioned specifications
are applicable.
Designation:
each wafer is laser scribed with batch and wafer number
Wafer diameter:
150 mm (6")
±
0.3 mm
Die separation lane width:
80 μm (Scribe line)
Electrical connection of substrate:
VSS
Geometrically complete dies per wafer:
approx. 7400
Orientation of dies relat. to wafer flat:
see attached cluster map
Position of test structures:
see attached cluster map
Wafer layout:
see attached cluster map
Batch size:
24 wafers
Process:
6C15 IDFW
7.1 Wafer Status
Tested, unsawn
Tested, sawn on FFC
Minimum yield per lot:
30 %
7.2 Backside Treatment
Wafers can be delivered with a thickness of 525 μm (untreated) or with 150
μ
m
±
15 μm (approx.
6 mil) and have a ground and etched backside.
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