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参数资料
| 型号： | SL22/52T |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 2 A, 20 V, SILICON, RECTIFIER DIODE, DO-214AA |
| 封装： | PLASTIC, SMB, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 300K |
| 代理商： | SL22/52T |
SL22 & SL23
Document Number 88741
20-Oct-05
Vishay General Semiconductor
www.vishay.com
1
DO-214AA (SMB)
Surface Mount Schottky Barrier Rectifier
Major Ratings and Characteristics
IF(AV)
2.0 A
VRRM
20 V to 30 V
IFSM
100 A
VF
0.32 V
Tj max.
125 °C
Features
Low profile package
Ideal for automated placement
Guardring for overvoltage protection
Low power losses, high efficiency
Very low forward voltage drop
High surge capability
Meets MSL level 1, per J-STD-020C
Solder Dip 260 °C, 40 seconds
Typical Applications
For use in low voltage high frequency inverters, free-
wheeling, dc-to-dc converters, and polarity protection
applications
Mechanical Data
Case: DO-214AA (SMB)
Epoxy meets UL 94V-0 Flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes the cathode end
Maximum Ratings
TA = 25 °C unless otherwise specified
Parameter
Symbols
SL22
SL23
Units
Device marking code
SL2
SL3
Maximum repetitive peak reverse voltage
VRRM
20
30
V
Maximum RMS voltage
VRMS
14
21
V
Maximum DC blocking voltage
VDC
20
30
V
Maximum average forward rectified current at TL (See Fig.1)
IF(AV)
2.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
100
A
Voltage rate of change (rated VR)
dv/dt
10000
V/s
Operating junction temperature range
TJ
- 55 to + 125
°C
Storage temperature range
TSTG
- 55 to + 150
°C
相关PDF资料 |
PDF描述 |
|---|---|
| SL23/2T | 2 A, 30 V, SILICON, RECTIFIER DIODE, DO-214AA |
| SL44 | 4 A, 40 V, SILICON, RECTIFIER DIODE, DO-214AB |
| SL44-E3 | 4 A, 40 V, SILICON, RECTIFIER DIODE, DO-214AB |
| SL44-HE3 | 4 A, 40 V, SILICON, RECTIFIER DIODE, DO-214AB |
| SL42-HE3 | 4 A, 20 V, SILICON, RECTIFIER DIODE, DO-214AB |
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