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| 型号： | SLCD-61N1/3 |
| 元件分类： | 光敏二极管 |
| 英文描述： | PHOTO DIODE |
| 文件页数： | 1/1页 |
| 文件大小： | 28K |
| 代理商： | SLCD-61N1/3 |
5200 St. Patrick St., Montreal
The Old Railway, Princes Street
Que., H4E 4N9, Canada
Ulverston, Cumbria, LA12 7NQ, UK
Tel: 514-768-8000
Tel: 01 229 581 551
Fax: 514-768-8889
Fax: 01 229 581 554
QF-84
SLSD -71N1
SLSD -71N1 / #
Solderable Planar Photodiode
Features
Visible and IR spectral response
High reliability
Oxide passivation
Linear short circuit current
Low capacitance, high speed
Protective coating
Available in arrays where # indicates number of
elements ( maximum of 9 elements )
Description
The Silonex series of silicon solderable planar
photodiodes feature low cost, high reliability, and
linear short circuit current over a wide range of
illumination. These devices are widely used for light
sensing and power generation because of their
stability and high efficiency.
They are particularly
suited to power conversion applications due to their
low
internal
impedance,
relatively
high
shunt
impedance, and stability.
The photodiodes have a
protective coating that protects them from humidity
effects. The electrical characteristics below are per
element. In the multielement arrays the cathodes are
common to a single cathode wire.
Absolute Maximum Ratings
Storage Temperature
-40
°C to +105°C
Operating Temperature
-40
°C to +105°C
-BLK
(Cathode)
+RED
(Anode)
Sensitive Area
(10.4 sq. mm.)
#32 AWG Wire
Dimensions in mm.
1.0
5.08
2.54
150 nom.
5.1
Also available without leads as part number SLCD-61N1
0
.2
.4
.6
.8
1.0
10°
20°
30°
40°
50°
60°
70°
80°
90°
100°
1.0
.8
.6
.4
0
20°
40°
60°
80°
100° 120°
o
Half Angle = 60°
Directional Sensitivity Characteristics
Electrical Characteristics (TA=25
°C unless otherwise noted)
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
ISC
Short Circuit Current
0.4
0.5
mA
VR=0V, Ee=25mW/cm
2 (1)
VOC
Open Circuit Voltage
0.40
V
Ee=25mw/cm
2 (1)
ID
Reverse Dark Current
1.7
A
VR=5V, Ee=0
CJ
Junction Capacitance
0.4
nF
VR=0V, Ee=0, f=1MHz
Sλ
Spectral Sensitivity
0.55
A/W
λ=940nm
VBR
Reverse Breakdown Voltage
20
V
IR=100
A
λ
P
Maximum Sensitivity Wavelength
930
nm
λ
R
Sensitivity Spectral Range
400
1100
nm
θ
1/2
Acceptance Half Angle
60
deg
(off center-line)
Notes: (1) Ee = light source @ 2854
°K
Specifications subject to change without notice
101391 REV 8
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SLCD-61N2 | 制造商:Silonex Inc (Casco Products) 功能描述:PHOTODIODE PLANAR CHIP 制造商:Silonex Inc (Casco Products) 功能描述:PHOTODIODE, PLANAR CHIP 制造商:Silonex Inc (Casco Products) 功能描述:PHOTODIODE, PLANAR CHIP; Wavelength of Peak Sensitivity:930nm; Angle of Half Sensitivity :60; Dark Current:1A; No. of Pins:1; Operating Temperature Min:-40C; Operating Temperature Max:105C; Wavelength Typ:930nm ;RoHS Compliant: Yes |
| SLCD-61N2 | 制造商:Silonex Inc (Casco Products) 功能描述:PHOTODIODE PLANAR CHIP |
| SLCD-61N3 | 制造商:Silonex Inc (Casco Products) 功能描述:PHOTODIODE PLANAR CHIP 制造商:Silonex Inc (Casco Products) 功能描述:PHOTODIODE, PLANAR CHIP 制造商:Silonex Inc (Casco Products) 功能描述:PHOTODIODE, PLANAR CHIP; Wavelength of Peak Sensitivity:930nm; Angle of Half Sensitivity :60; Dark Current:1.7A; No. of Pins:1; Operating Temperature Min:-40C; Operating Temperature Max:125C; Wavelength Typ:930nm ;RoHS Compliant: Yes |
| SLCD-61N3 | 制造商:Silonex Inc (Casco Products) 功能描述:PHOTODIODE PLANAR CHIP |
| SLCD-61N4 | 制造商:Silonex Inc (Casco Products) 功能描述:PHOTODIODE PLANAR CHIP 制造商:Silonex Inc (Casco Products) 功能描述:PHOTODIODE, PLANAR CHIP 制造商:Silonex Inc (Casco Products) 功能描述:PHOTODIODE, PLANAR CHIP; Wavelength of Peak Sensitivity:930nm; Angle of Half Sensitivity :60; Dark Current:5A; Diode Case Style:Planar; No. of Pins:1; Operating Temperature Min:-40C; Operating Temperature Max:125C; SVHC:No SVHC ;RoHS Compliant: Yes |
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