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参数资料
| 型号： | SLD-65HFBG1B |
| 元件分类： | 光敏二极管 |
| 英文描述： | PHOTO DIODE |
| 封装： | HERMETIC, TO-8, 2 PIN |
| 文件页数： | 1/1页 |
| 文件大小： | 31K |
| 代理商： | SLD-65HFBG1B |
5200 St. Patrick St., Montreal
The Old Railway, Princes Street
Que., H4E 4N9, Canada
Ulverston, Cumbria, LA12 7NQ, UK
Tel: 514-768-8000
Tel: 01 229 581 551
Fax: 514-768-8889
Fax: 01 229 581 554
QF-84
SLD-65HFBG1
Integral Infrared Rejection Filter
Silicon Planar Photodiode
Features
Low dark leakage current
High sensitivity
Low Capacitance
TO-8 Hermetic packaging
Linear response vs irradiance
High reliability
IR blocking Filter
Multiple dark current ranges available
Description
This family of planar, passivated photodiodes is
designed
for
photovoltaic
and
photoconductive
applications.
The high sensitivity and low dark
currents make these devices ideal for low irradiance
detection.
As well, their low capacitance and high
speed
make
them
useful
for
fast
rise
time
applications. These detectors are housed in a TO-8
package. Internal blue-green filter blocks infrared
radiation.
Absolute Maximum Ratings
Storage Temperature
-25 to + 85
°C
Operating Temperature
-25 to + 85
°C
Soldering Temperature (1)
260
°C
Notes: (1) >2 mm from case for <5 sec.
(2) Ee = source @ 2854
°K
(3) Ee = source @
λ=580 nm
5.7
12.3
2.4
Dimensions in mm. (+/- 0.2)
Photodiode
Chip size: 5.2 mm x 5.2 mm.
Active Area: 20.3 sq.mm.
Window dia: 10.9 mm.
Anode
Cathode
Red dot
Flat lens
38 min
0.5
14.0
50°
60°
70°
80°
100°
0.8
0.6
0.4
0.2
1.0
20°
40°
60°
80°
100°
90°
40°
30°
20°
10°
0.8
0.6
0.4
Directional Sensitivity Characteristics
Half Angle = 45°
0.0
120°
1.0
Electrical Characteristics (TA=25
°C unless otherwise noted)
Symbol
Parameter
MIN
TYP
MAX
UNITS
TEST CONDITIONS
ISC
Short Circuit Current
60
100
A
Ee = 25mW/cm
2 (2)
VOC
Open Circuit Voltage
0.41
V
Ee = 25mW/cm
2 (2)
ID
Reverse Dark Current:
SLD-65HFBG1A
100
nA
VR = 100 mV, Ee=0
SLD-65HFBG1B
100
nA
VR = 5 V, Ee=0
SLD-65HFBG1C
20
nA
VR = 5 V, Ee=0
SLD-65HFBG1D
5
nA
VR = 5 V, Ee=0
SLD-65HFBG1E
1
nA
VR = 5 V, Ee=0
CJ
Junction Capacitance
380
pf
V = 0V, Ee = 0, f = 1MHz
tr
Rise time
10
S
VR=10V, RL=1k
, (3)
tf
Fall time
12
S
VR=10V, RL=1k
, (3)
VBR
Reverse Breakdown Voltage
50
V
IR = 100
A
λ
P
Maximum Sensitivity Wavelength
550
nm
λ
R
Sensitivity Spectral Range
400
700
nm
θ
1/2
Acceptance Half Angle
45
deg
(off center-line)
Specifications subject to change without notice
103202 REV 1
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