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参数资料
| 型号： | SLD-67HF1C |
| 元件分类： | 光敏二极管 |
| 英文描述： | PHOTO DIODE |
| 封装： | HERMETIC, TO-5, 2 PIN |
| 文件页数： | 1/1页 |
| 文件大小： | 36K |
| 代理商： | SLD-67HF1C |
5200 St. Patrick St., Montreal
The Old Railway, Princes Street
Que., H4E 4N9, Canada
Ulverston, Cumbria, LA12 7NQ, UK
Tel: 514-768-8000
Tel: 01 229 581 551
Fax: 514-768-8889
Fax: 01 229 581 554
QF-84
SLD-67HF1
Planar Photodiode
Features
Hermetic TO-5 package
High short circuit current
Low package profile
Large active area
Multiple dark current ranges available
Description
This planar silicon photodetector is designed to
operate in either photovoltaic or reverse bias mode to
provide low capacitance with fast switching speed. It
provides excellent linearity in output signal versus
irradiance. Sealed in a flat window, dual lead TO-5
package, it is the ideal device for applications
requiring a hermetic seal.
Absolute Maximum Ratings
Storage Temperature
-40 to +125
°C
Operating Temperature
-40 to +125
°C
Soldering Temperature (2)
260
°C
Anode+
Cathode -
(Common to case)
Chip size: 3.6 mm. X 6.1 mm.
Active area: 18.3 sq.mm.
Dimensions in mm.
Tolerance: +/-0.13
4.2
5.1
9.1
2.3
0.41 - 0.48
38 min
8.3
50°
60°
70°
80°
100°
0.8
0.6
0.4
0.2
1.0
20°
40°
60°
80°
100°
90°
40°
30°
20°
10°
0.8
0.6
0.4
Directional Sensitivity Characteristics
Half Angle = 45°
0.0
120°
1.0
Electrical Characteristics (TA=25
°C unless otherwise noted)
Symbol Parameter
Min
Typ
Max
Units
Test Conditions
ISC
Short Circuit Current
600
850
A
VR =0V, Ee=25mW/cm
2 (1)
VOC
Open Circuit Voltage
0.40
V
Ee = 25 mW/cm
2 (1)
ID
Reverse Dark Current:
SLD-67HF1A
100
nA
VR = 100 mV, Ee = 0
SLD-67HF1B
100
nA
VR = 5V, Ee = 0
SLD-67HF1C
20
nA
VR = 5V, Ee = 0
SLD-67HF1D
5
nA
VR = 5V, Ee = 0
SLD-67HF1E
1
nA
VR = 5V, Ee = 0
CJ
Junction Capacitance
350
pf
VR = 0, Ee = 0, f = 1 MHz
tR
Rise Time
8
s
VR=10V, RL=1k
(3)
tF
Fall Time
10
s
VR=10V, RL=1k
(3)
VBR
Reverse Breakdown Voltage
50
V
IR = 100
A
λ
P
Maximum Sensitivity Wavelength
930
nm
λ
R
Sensitivity Spectral Range
400
1100
nm
θ
1/2
Acceptance Half Angle
45
Deg
(off center-line)
Note: (1) Ee = source @ 2854
°K
Specifications subject to change without notice
(2) >2 mm from case for <5 sec.
101795 REV 2
(3) Ee = source @
λ=940 nm
相关PDF资料 |
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|---|---|
| SLD-67HF1E | PHOTO DIODE |
| SLD-67HF1D | PHOTO DIODE |
| SLD-67HFBG1D | PHOTO DIODE |
| SLD-67HFBG1C | PHOTO DIODE |
| SLD-68HF1A | PHOTO DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SLD-67HF2 | 制造商:SILONEX 制造商全称:SILONEX 功能描述:Planar Photodiode |
| SLD-67HF2A | 制造商:Advanced Photonix Inc 功能描述:Photodiode, Planar, Clear Epoxy Dome Package, 180 muA (Typ.), 0.40 V (Typ.), 2.0 制造商:SILONEX 功能描述: 制造商:Silonex Inc (Casco Products) 功能描述:PHOTO DIODE, PLANAR, TO-5 |
| SLD-67HFBG2A | 制造商:ADVANCED PHOTONIX 功能描述:PHOTODIODE; 7.5 UA (MIN.); 0.40 V (TYP.); 100 NA (MAX.); 40 PF (TYP.); -20 DEGC |
| SLD-68E1 | 制造商:SILONEX 制造商全称:SILONEX 功能描述:Planar Photodiode |
| SLD-68E1A | 制造商:ADVANCED PHOTONIX 功能描述:Photodiode; 150 uA (Min.); 0.40 V (Typ.); 100 nA (Max.); 40 pF (Typ.); -20 degC |
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