- 您现在的位置：买卖IC网 > PDF目录85352 > SLD-67HFBG1B PHOTO DIODE PDF资料下载
参数资料
| 型号： | SLD-67HFBG1B |
| 元件分类： | 光敏二极管 |
| 英文描述： | PHOTO DIODE |
| 封装： | HERMETICALLY SEALED, TO-5, 2 PIN |
| 文件页数： | 1/1页 |
| 文件大小： | 32K |
| 代理商： | SLD-67HFBG1B |
5200 St. Patrick St., Montreal
The Old Railway, Princes Street
Que., H4E 4N9, Canada
Ulverston, Cumbria, LA12 7NQ, UK
Tel: 514-768-8000
Tel: 01 229 581 551
Fax: 514-768-8889
Fax: 01 229 581 554
QF-84
SLD-67HFBG1
Silicon Photodiode
Integral Infrared Rejection Filter
Features
Large Area Planar Photodiode
Low capacitance, fast switching time
High responsivity
Low leakage current
Linear response vs irradiance
IR Blocking Filter
TO-5 package
Multiple dark current ranges available
Description
This flat window hermetically sealed TO-5, passivated
silicon photodetector is designed to operate in either
photovoltaic or reverse bias mode to provide low
capacitance with fast switching speed and high
responsivity. It provides excellent linearity in output
signal versus light intensity. Low dark current and low
capacitance makes it the ideal detector for fast rise
time applications. The package incorporates an
infrared rejection optical filter.
Absolute Maximum Ratings
Storage Temperature
-20
°C to +110°C
Operating Temperature
-20
°C to +110°C
Soldering Temperature (3)
260
°C
Chip size: 3.6 mm. X 6.1 mm.
Active area:18.3 sq.mm.
Anode+
Cathode -
(Common to case)
4.2
5.1
9.1
2.3
0.5
Max
38 Min
8.3
Dimensions in mm. (+/- 0.20)
50°
60°
70°
80°
100°
0.8
0.6
0.4
0.2
1.0
20°
40°
60°
80°
100°
90°
40°
30°
20°
10°
0.8
0.6
0.4
Directional Sensitivity Characteristics
Half Angle = 45°
0.0
120°
1.0
Electrical Characteristics (TA=25
°C unless otherwise noted)
Symbol
Parameter
MIN
TYP
MAX
UNITS
TEST CONDITIONS
ISC
Short Circuit Current
70
125
A
VR=0V, Ee=25mW/cm
2 (1)
VOC
Open Circuit Voltage
0.40
V
Ee=25mw/cm
2
(1)
ID
Reverse Dark Current:
SLD-67HFBG1A
100
nA
VR = 0.1V, Ee = 0
SLD-67HFBG1B
100
nA
VR = 5V, Ee = 0
SLD-67HFBG1C
20
nA
VR = 5V, Ee = 0
SLD-67HFBG1D
5
nA
VR = 5V, Ee = 0
SLD-67HFBG1E
1
nA
VR = 5V, Ee = 0
CJ
Junction Capacitance
350
pF
VR=0, Ee=0, f=1MHz
tR
Rise Time
8
s
VR=10V, RL=1k
(2)
tF
Fall Time
10
s
VR=10V, RL=1k
(2)
TCI
ISC Temp. Coef.
+0.2
%/
°C (1)
VBR
Reverse Breakdown Voltage
50
V
IR= 100
A
λ
P
Maximum Sensitivity Wavelength
550
nm
λ
R
Sensitivity Spectral Range
400
700
nm
θ
1/2
Acceptance Half Angle
45
deg
(off center-line)
Notes: (1) Ee = source @ 2854
°K
Specifications are subject to change without notice.
(2) Ee = source @
λ = 580 nm
103243 REV 0
(3) >2 mm from case for <5 sec.
相关PDF资料 |
PDF描述 |
|---|---|
| SLDA-61S13-11 | PHOTO DIODE |
| S3100TO4-12VF-N | SINGLE COLOR DISPLAY CLUSTER, ORANGE, 25.4 mm |
| SF3-G | SINGLE COLOR LED ARRAY, GREEN, 2.25 mm |
| S4100TY3-12V/30-B | SINGLE COLOR DISPLAY CLUSTER, YELLOW, 25.4 mm |
| SLR-332VCT32 | T-1 SINGLE COLOR LED, RED, 3.2 mm |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SLD-67HFBG2A | 制造商:ADVANCED PHOTONIX 功能描述:PHOTODIODE; 7.5 UA (MIN.); 0.40 V (TYP.); 100 NA (MAX.); 40 PF (TYP.); -20 DEGC |
| SLD-68E1 | 制造商:SILONEX 制造商全称:SILONEX 功能描述:Planar Photodiode |
| SLD-68E1A | 制造商:ADVANCED PHOTONIX 功能描述:Photodiode; 150 uA (Min.); 0.40 V (Typ.); 100 nA (Max.); 40 pF (Typ.); -20 degC |
| SLD-68EBG1 | 制造商:SILONEX 制造商全称:SILONEX 功能描述:Integral Infrared Rejection Filter Planar Photodiode |
| SLD-68EBG1A | 制造商:ADVANCED PHOTONIX 功能描述:Photodiode; 7.5 uA (Min.); 0.40 V (Typ.); 100 nA (Max.); 40 pF (Typ.); -20 degC |
发布紧急采购，3分钟左右您将得到回复。