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参数资料
| 型号： | SLD-68HLBG1D |
| 元件分类： | 光敏二极管 |
| 英文描述： | PHOTO DIODE |
| 封装： | HERMETIC, TO-46, 2 PIN |
| 文件页数： | 1/1页 |
| 文件大小： | 25K |
| 代理商： | SLD-68HLBG1D |
5200 St. Patrick St., Montreal
The Old Railway, Princes Street
Que., H4E 4N9, Canada
Ulverston, Cumbria, LA12 7NQ, UK
Tel: 514-768-8000
Tel: 01 229 581 551
Fax: 514-768-8889
Fax: 01 229 581 554
QF-84
SLD-68HLBG1
Internal Infrared Rejection Filter
Planar Photodiode
Features
Low capacitance, fast switching time
Low leakage current
Linear response vs irradiance
Internal IR rejection filter
Hermetic TO-46 case with high dome lens
Multiple dark current ranges available
Description
This planar, passivated silicon photodiode is designed
to maximize response in the visible light spectrum of
received energy. This diode incorporates a BG filter
that rejects infrared wavelengths and approximates
the response of the human eye. These photodiodes
may operate in either photovoltaic or reverse bias
mode to provide low capacitance with fast switching
speed.
It provides excellent linearity in response
versus light intensity.
Absolute Maximum Ratings
Storage Temperature
-20
°C to +75°C
Operating Temperature
-20
°C to +75°C
Soldering Temperature (3)
260
°C
Notes: (1) Ee = light source @ 2854
°K.
(2) Ee = light source @
λ = 580 nm.
(3) >2 mm from case for < 5 sec.
Cathode
(Common to case)
Anode
Chip Size = 1.7 mm X 1.7 mm
Active Area = 2.0 sq.mm.
25.4 min.
45°
Dimensions in mm. (+/-0.13)
1.0
5.1
4.7
0.41 - 0.48
5.3
2.5
Directional Sensitivity Characteristics
1.0
10°
20°
30°
40°
50°
60°
70°
80°
90°
100°
1.0
0.8
0.6
0.4
0°
120°
Half Angle = 15°
20°
40°
60°
80°
100°
0.8
0.6
0.4
0.2
0
Electrical Characteristics (TA=25
°C unless otherwise noted)
Symbol
Parameter
MIN
TYP
MAX
UNITS
TEST CONDITIONS
ISC
Short Circuit Current
18
30
A
VR=0V, Ee=25mW/cm
2 (1)
VOC
Open Circuit Voltage
0.40
V
Ee=25mw/cm
2
(1)
ID
Reverse Dark Current:
SLD-68HLBG1A
100
nA
VR=100mV, Ee=0
SLD-68HLBG1B
100
nA
VR=5V, Ee=0
SLD-68HLBG1C
10
nA
VR=5V, Ee=0
SLD-68HLBG1D
1
nA
VR=5V, Ee=0
SLD-68HLBG1E
250
pA
VR=5V, Ee=0
CJ
Junction Capacitance
40
pF
VR=0, Ee=0, f=1MHz
tR
Rise Time
1.0
s
VR=10V, RL=1k
(2)
tF
Fall Time
1.5
s
VR=10V, RL=1k
(2)
TCI
Temp. Coef.
+0.2
%/
°C (1)
VBR
Reverse Breakdown Voltage
50
V
IR=100
A
λ
P
Maximum Sensitivity Wavelength
550
nm
λ
R
Sensitivity Spectral Range
400
700
nm
θ
1/2
Acceptance Half Angle
15
deg
(off center-line)
Specifications subject to change without notice
102538 REV 2
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