- 您现在的位置：买卖IC网 > PDF目录66225 > SLD-69IR1B PHOTO DIODE PDF资料下载
参数资料
| 型号： | SLD-69IR1B |
| 元件分类： | 光敏二极管 |
| 英文描述： | PHOTO DIODE |
| 文件页数： | 1/1页 |
| 文件大小： | 24K |
| 代理商： | SLD-69IR1B |
5200 St. Patrick St., Montreal
The Old Railway, Princes Street
Que., H4E 4N9, Canada
Ulverston, Cumbria, LA12 7NQ, UK
Tel: 514-768-8000
Tel: 01 229 581 551
Fax: 514-768-8889
Fax: 01 229 581 554
QF-84
SLD-69IR1
Visible Light Rejection Filter
Planar Photodiode
Features
Fast switching time
Low leakage current
Linear response vs irradiance
IR pass filter
Multiple dark current ranges available
Description
This planar, passivated silicon photodiode is designed
to maximize response in the infrared spectrum of
received energy. It is supplied on a ceramic base with
an IR transmissive epoxy dome package that rejects
the
visible
light
wavelengths.
Photodiodes
may
operate in either photovoltaic or reverse bias mode to
provide low capacitance with fast switching speed. It
provides excellent linearity in output signal versus
irradiance.
Absolute Maximum Ratings
Operating & Storage Temperature
-20
°C to +85°C
Soldering Temperature (1)
260
°C
Power Dissipation @ 25
°C
250 mW
IR Transmissive
Epoxy
Anode +
Cathode -
Red dot
Chip size: 3.6 mm X 6.1 mm
Active area: 18.3 sq.mm.
9.2
7.9
3.4
Max
19.0
Max
1.8
0.50-0.52
6.7
Dimensions in mm (+/- 0.2)
1.0
0.8
0.6
0.4
100°
90°
80°
70°
60°
50°
40°
30°
20°
10°
Half Angle = 60°
Directional Sensitivity Characteristics
20°
40°
60°
80°
100° 120°
0.0
0.2
0.4
0.6
0.8
1.0
Electrical Characteristics (TA=25
°C, unless otherwise noted)
Symbol
Parameter
MIN
TYP
MAX
UNITS
TEST CONDITIONS
ISC
Short Circuit Current
700
1000
A
VR=0V, Ee=25mW/cm
2 (2)
VOC
Open Circuit Voltage
0.40
V
Ee=25mW/cm
2
(2)
ID
Reverse Dark Current:
SLD-69IR1A
100
nA
VR = 0.1V, Ee = 0
SLD-69IR1B
100
nA
VR = 5V, Ee = 0
SLD-69IR1C
20
nA
VR = 5V, Ee = 0
SLD-69IR1D
5
nA
VR = 5V, Ee = 0
SLD-69IR1E
1
nA
VR = 5V, Ee = 0
CJ
Junction Capacitance
350
pF
VR=0, Ee=0, f=1MHz
tR
Rise Time
8
s
VR=10V, RL=1k
(3)
tF
Fall Time
10
s
VR=10V, RL=1k
(3)
TCI
ISC Temp. Coef.
+0.2
%/
°C (2)
VBR
Reverse Breakdown Voltage
50
V
IR=100
A
λ
P
Maximum Sensitivity Wavelength
990
nm
λ
R
Sensitivity Spectral Range
700
1100
nm
θ
1/2
Acceptance Half Angle
60
deg
(off center-line)
Notes: (1) >2 mm from case for <5 sec.
Specifications are subject to change without notice.
(2) Ee = light source @ 2854
°K
101652 REV 2
(3) Ee = light source @
λ = 880 nm
相关PDF资料 |
PDF描述 |
|---|---|
| SLD-69IR1D | PHOTO DIODE |
| SLD-69IR1E | PHOTO DIODE |
| SLD-70C2B | PHOTO DIODE |
| SLD-70C2C | PHOTO DIODE |
| SLD-70C2D | PHOTO DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SLD6R-1LF | 制造商:FCI 功能描述:Conn FFC/FPC Connector SKT 6 POS 2.5mm Solder RA Thru-Hole |
| SLD6R-2 | 制造商:FCI 功能描述:CONN FFC/FPC CONN SKT 6 POS 2.5MM SLDR RA TH - Trays |
| SLD6S-1 | 功能描述:SLD6S-1-SLD6S-1 RoHS:否 类别:连接器，互连式 >> FFC，FPC（扁平软线）- 连接器 - 面板安装 系列:SLD 标准包装:1 系列:Easy-On™ 54809 连接器类型:底部触点 位置数:31 间距:0.012"（0.30mm） FFC，FCB 厚度:0.20mm 板上方高度:0.051"（1.30mm） 安装类型:表面贴装，直角 线缆端类型:直形 端子:焊接 锁定功能:触发锁 特点:零插入力（ZIF） 包装:Digi-Reel® 触点表面涂层:锡铋 触点涂层厚度:- 工作温度:-20°C ~ 85°C 额定电流:0.300A 额定电压:50V 体座材料:液晶聚合物（LCP） 其它名称:WM6540DKR |
| SLD6S-1LF | 功能描述:FFC & FPC连接器 6P TOP ENT STRT ZIF RoHS:否 制造商:JAE Electronics 产品类型:Plugs 系列:HD 节距:0.5 mm 位置/触点数量:40 安装角: 安装风格:Cable 外壳材料:Plastic 触点材料:Copper Alloy 触点电镀:Gold 电压额定值:100 V per contact 电流额定值:0.24 A to 1 A |
| SLD-70 BG2A | 制造商:Silonex Inc (Casco Products) 功能描述:PHOTODIODE BG FILTERED 制造商:Silonex Inc (Casco Products) 功能描述:PHOTODIODE, BG FILTERED 制造商:Silonex Inc (Casco Products) 功能描述:DIODE, PHOTO, 550NM, 60; Wavelength of Peak Sensitivity:550nm; Angle of Half Sensitivity :60; Dark Current:100nA; Diode Case Style:Radial Leaded; No. of Pins:2; Operating Temperature Min:-20C; Operating Temperature Max:85C ;RoHS Compliant: Yes |
发布紧急采购，3分钟左右您将得到回复。