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参数资料
| 型号： | SLD-70BG2C |
| 元件分类： | 光敏二极管 |
| 英文描述： | PHOTO DIODE |
| 文件页数： | 1/1页 |
| 文件大小： | 24K |
| 代理商： | SLD-70BG2C |
5200 St. Patrick St., Montreal
The Old Railway, Princes Street
Que., H4E 4N9, Canada
Ulverston, Cumbria, LA12 7NQ, UK
Tel: 514-768-8000
Tel: 01 229 581 551
Fax: 514-768-8889
Fax: 01 229 581 554
QF-84
SLD-70BG2
Infrared Rejection Filter
Planar Photodiode
Features
Low capacitance, fast switching time
Linear response vs irradiance
IR blocking filter
Multiple dark current ranges available
Description
The planar photodiode is designed to operate in
either photoconductive or photovoltaic modes. This
diode incorporates a BG filter that rejects infrared
wavelengths and approximates the response of the
human eye. High sensitivity and low dark current
allow
use
in
low
irradiance
applications.
The
photodiode measures 3.6 mm X 3.6 mm (0.140” X
0.140”) and is supplied on a ceramic base with a
clear epoxy dome package.
Absolute Maximum Ratings
Storage Temperature
-20
°C to +85°C
Operating Temperature
-20
°C to +85°C
Soldering Temperature (1)
260
°C
Notes: (1) >2 mm from case for < 5 sec.
(2) Ee = source @ 2854
°K
(3) Ee = source @
λ = 580 nm
Chip Size = 3.6 mm X 3.6 mm
Active Area = 9.8 sq.mm.
Optical
Clear Epoxy
Anode
Cathode
Dimensions in mm. (+/- 0.2)
Red dot
BG Filter
1.9
38 nom.
6.3
7.2
3.4
Max.
0.50-0.52
5.1
1.0
0.8
0.6
0.4
100°
90°
80°
70°
60°
50°
40°
30°
20°
10°
Half Angle = 60°
Directional Sensitivity Characteristics
20°
40°
60°
80°
100°
120°
0.0
0.2
0.4
0.6
0.8
1.0
Electrical Characteristics (TA=25
°C unless otherwise noted)
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
ISC
Short Circuit Current
40
55
A
VR=0V, Ee=25mW/cm
2 (2)
VOC
Open Circuit Voltage
0.40
V
Ee=25mw/cm
2
(2)
ID
Reverse Dark Current:
SLD-70BG2A
100
nA
VR=100mV, Ee=0
SLD-70BG2B
100
nA
VR=5V, Ee=0
SLD-70BG2C
20
nA
VR=5V, Ee=0
SLD-70BG2D
5
nA
VR=5V, Ee=0
SLD-70BG2E
1
nA
VR=5V, Ee=0
CJ
Junction Capacitance
180
pF
VR=0V, Ee=0, f=1MHz
tR
Rise Time
4
s
VR=5V, RL=1k
(3)
tF
Fall Time
6
s
VR=5V, RL=1k
(3)
TCI
Temp. Coef., ISC
+0.2
%/
°C (2)
VBR
Reverse Breakdown Voltage
50
V
IR=100
A
λ
P
Maximum Sensitivity Wavelength
550
nm
λ
R
Sensitivity Spectral Range
400
700
nm
θ
1/2
Acceptance Half Angle
60
deg
(off center-line)
Specifications subject to change without notice.
103184 REV 0
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SLD-70C1 | 制造商:SILONEX 制造商全称:SILONEX 功能描述:Planar Photodiode |
| SLD-70C1A | 制造商:ADVANCED PHOTONIX 功能描述:Photodiode, Planar; Clear Epoxy Dome Package; 180 muA (Typ.); 0.40 V (Typ.); 2.0 |
| SLD-70C2 | 制造商:SILONEX 制造商全称:SILONEX 功能描述:Planar Photodiode |
| SLD-70C2A | 制造商:ADVANCED PHOTONIX 功能描述:Photodiode, Planar; Clear Epoxy Dome Package; 700 muA (Typ.); 0.40 V (Typ.) |
| SLD-70E-470-1.4 | 制造商:Advanced Photonix Inc 功能描述:WAVELENGTH SELECTIVE PHOTODIODES, HERMETIC, CERAMIC, T0-5 CERAMIC |
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