参数资料
型号: SLD-70IR2D
元件分类: 光敏二极管
英文描述: PHOTO DIODE
文件页数: 1/1页
文件大小: 23K
代理商: SLD-70IR2D
5200 St. Patrick St., Montreal
The Old Railway, Princes Street
Que., H4E 4N9, Canada
Ulverston, Cumbria, LA12 7NQ, UK
Tel: 514-768-8000
Tel: 01 229 581 551
Fax: 514-768-8889
Fax: 01 229 581 554
QF-84
SLD-70IR2
Visible Light Rejection Filter
Planar Photodiode
Features
Planar Photodiode
Low capacitance
Fast switching time
Low leakage current
Linear response vs irradiance
IR Pass Filter
Multiple dark current ranges available
Description
The planar photodiode is designed to maximize
response in the infrared spectrum of received
energy. The photodiode is supplied on a ceramic
base with an IR transmissive epoxy dome package
that rejects visible light wavelengths.
Photodiodes
may operate in either photovoltaic or reverse bias
mode to provide low capacitance with fast switching
speed.
High sensitivity and low dark current allow
use in even low irradiance applications.
Absolute Maximum Ratings
Storage Temperature
-20
°C to +75°C
Operating Temperature
-20
°C to +75°C
Soldering Temperature (3)
260
°C
Notes: (1) Ee = source @ 2854
°K.
(2) Ee = source @
λ = 880 nm
(3) >2 mm from case for < 5 sec.
Chip Size = 3.6 mm X 3.6 mm
Active Area = 9.8 sq.mm.
1.9
38 nom.
6.3
7.2
3.4
0.5
IR Epoxy
Anode
Cathode
5.1
Dimensions in mm.
max.
Red dot
1.0
0.8
0.6
0.4
100°
90°
80°
70°
60°
50°
40°
30°
20°
10°
Half Angle = 60°
Directional Sensitivity Characteristics
20°
40°
60°
80°
100° 120°
0.0
0.2
0.4
0.6
0.8
1.0
Electrical Characteristics (TA=25
°C unless otherwise noted)
Symbol
Parameter
MIN
TYP
MAX
UNITS
TEST CONDITIONS
ISC
Short Circuit Current
400
650
A
VR=0V, Ee=25mW/cm
2 (1)
VOC
Open Circuit Voltage
0.40
V
Ee=25mw/cm
2
(1)
ID
Reverse Dark Current:
SLD-70IR2A
100
nA
VR=100mV, Ee=0
SLD-70IR2B
100
nA
VR=5V, Ee=0
SLD-70IR2C
20
nA
VR=5V, Ee=0
SLD-70IR2D
5
nA
VR=5V, Ee=0
SLD-70IR2E
1
nA
VR=5V, Ee=0
CJ
Junction Capacitance
180
pF
VR=0, Ee=0, f=1MHz
tR
Rise Time
4
s
VR=5V, RL=1k
(2)
tF
Fall Time
6
s
VR=5V, RL=1k
(2)
TCI
Temp. Coef., ISC
+0.2
%/
°C (1)
VBR
Reverse Breakdown Voltage
50
V
IR=100
A
λ
P
Maximum Sensitivity Wavelength
990
nm
λ
R
Sensitivity Spectral Range
700
1100
nm
θ
1/2
Acceptance Half Angle
60
deg
(off center-line)
Specifications subject to change without notice.
101738 REV 3
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