- 您现在的位置：买卖IC网 > PDF目录66225 > SLD301B 770 nm, LASER DIODE PDF资料下载
参数资料
| 型号： | SLD301B |
| 元件分类： | 激光器 |
| 英文描述： | 770 nm, LASER DIODE |
| 封装： | M-261, 2 PIN |
| 文件页数： | 3/7页 |
| 文件大小： | 64K |
| 代理商： | SLD301B |
– 3 –
SLD301B
Example of Representative Characteristics
Optical power output vs. Forward current
IF – Forward current [mA]
0
250
500
0
100
200
P
O
–
Optical
power
output
[mW]
Tc = –10°C
Tc = 0°C
Tc = 25°C
Tc = 50°C
Threshold current vs. Temperature characteristics
Tc – Case temperature [°C]
–10
0
1020304050
100
500
1000
Ith
–
Threshold
current
[mA]
Power dependence of far field pattern
Angle [degree]
–30
–20
–10
0
102030
Radiation
intensity
(optional
scale)
Tc = 25°C
PO = 90mW
PO = 60mW
PO = 30mW
Power dependence of near field pattern
50m
Radiation
intensity
(optional
scale)
Tc = 25°C
PO = 90mW
PO = 75mW
PO = 50mW
PO = 25mW
Oscillation wavelength vs. Temperature characteristics
Tc – Case temperature [°C]
–10
0
1020304050
780
790
830
820
810
800
λp
–
Oscillation
wavelength
[nm]
PO = 90mW
Differential efficiency vs. Temperature characteristics
Tc – Case temperature [°C]
–10
0
50
40
30
20
10
0
0.5
1.0
1.5
η
D
–
Dif
ferential
ef
ficiency
[mW/mA]
(Parallel to junction)
相关PDF资料 |
PDF描述 |
|---|---|
| SLD302V-21 | 798 nm, LASER DIODE |
| SLD302V-24 | 807 nm, LASER DIODE |
| SLD303B | 770 nm, LASER DIODE |
| SLD304XT-24 | 807 nm, LASER DIODE |
| SLD304XT | 770 nm, LASER DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SLD30-1DS99B-S | 制造商:IDEC Corporation 功能描述:Display Light |
| SLD301V | 制造商:SONY 制造商全称:Sony Corporation 功能描述:100mW High Power Laser Diode |
| SLD301WT | 制造商:SONY 制造商全称:Sony Corporation 功能描述:100mW HIGH POWER LASER DIODE |
| SLD301XT | 制造商:SONY 制造商全称:Sony Corporation 功能描述:100mW High Power Laser Diode |
| SLD302B | 制造商:SONY 制造商全称:Sony Corporation 功能描述:Block-type 200mW High Power Laser Diode |
发布紧急采购，3分钟左右您将得到回复。