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参数资料
| 型号： | SLD302XT-3 |
| 元件分类： | 激光器 |
| 英文描述： | 830 nm, LASER DIODE |
| 封装： | M-273(LO-10), 8 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 89K |
| 代理商： | SLD302XT-3 |
1
Low-voltage operation photo IC
Operation at low voltage from 2.2 V
www.hamamatsu.com
S5767-100
S5768-100
The S5767-100 and S5768-100 are digital output photo ICs consisting of a photodiode, an amplier, a schmitt trigger circuit and
an output transistor, all integrated in a single chip and molded into a clear plastic package.
Absolute maximum ratings (Ta=25 °C)
Electrical and optical characteristics (Ta=25 °C, Vcc=5 V, light source: λp=890 nm LED, unless otherwise noted)
Parameter
Symbol
Value
Unit
Supply voltage
Vcc
-0.5 to +7
V
Output voltage
Vo
-0.5 to +7
V
Low level output current
Io
8
mA
Power dissipation
P
250
mW
Operating temperature
Topr
-25 to +85
°C
Storage temperature
Tstg
-40 to +100
°C
Soldering
-
260 °C, 3 s, at least 2.5 mm away from package bottom surface
-
Parameter
Symbol
Condition
S5767-100
S5768-100
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Supply voltage
Vcc
2.2
-
7
2.2
-
7
V
Low level output voltage
VOL
IOL=4 mA *1
-
0.1
0.4
-
0.1
0.4
V
High level output voltage
VOH
*2
4.9
-
4.9
-
V
Low level current consumption
ICCL
*1
-
1.5
3
-
1.5
3
mA
High level current consumption
ICCH
*2
-
1.2
3
-
1.2
3
mA
L
→H Threshold illuminance
ELH
λ=660 nm
-
0.1
0.3
-
μW/mm2
H
→L Threshold illuminance
EHL
-
0.1
0.3
μW/mm2
Hysterisis
-
*3
-
0.85
-
0.85
-
L
→H Propagation delay time
tPLH
E0=0 μW/mm2
E1=0.4 μW/mm2
RL=1.2 k
Ω
CL=10 pF
-
1
5
-
1.5
8
μs
H
→L Propagation delay time
tPHL
-
1.5
8
-
1
5
μs
Peak sensitivity wavelength
λp
-
820
-
820
-
nm
Rise time
tr
E0=0 μW/mm2
E1=0.4 μW/mm2
RL=1.2 k
Ω
CL=10 pF
-
0.07
-
0.07
-
μs
Fall time
tf
-
0.03
-
0.03
-
μs
*1: S5767-100: E (illuminance) =0 μW/mm2, S5768-100: E=0.4 μW/mm2
*2: S5767-100: E=0.4 μW/mm2, S5768-100: E=0 μW/mm2
*3: S5767-100: EHL/ELH, S5768-100: ELH/EHL
Features
Applications
Low-speed optical links
Low-voltage operation: 2.2 to 7 V
Rotary encoders
Clear plastic package with lens
Low current consumption
Transistor output with built-in pull-up resistor
S5767-100: “H” level output at light input
S5768-100: “L” level output at light input
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相关代理商/技术参数 |
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| SLD303B | 制造商:SONY 制造商全称:Sony Corporation 功能描述:BLOCK-TYPE 500mW HIGH POWER LASER DIODE |
| SLD303V | 制造商:SONY 制造商全称:Sony Corporation 功能描述:500mW HIGH POWER LASER DIODE |
| SLD303WT | 制造商:SONY 制造商全称:Sony Corporation 功能描述:500mW HIGH POWER LASER DIODE |
| SLD303XT | 制造商:SONY 制造商全称:Sony Corporation 功能描述:500mW High Power Laser Diode |
| SLD303XT-1 | 制造商:SONY 制造商全称:Sony Corporation 功能描述:500mW High Power Laser Diode |
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