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参数资料
| 型号： | SLD304V-1 |
| 元件分类： | 激光器 |
| 英文描述： | 785 nm, LASER DIODE |
| 封装： | M-248(LO-11), 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 197K |
| 代理商： | SLD304V-1 |
Photo IC diode
S9066-111, S9067-101
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2008 Hamamatsu Photonics K.K.
Cat. No. KPIC1052E05
Feb. 2008 DN
ILLUMINANCE (lx)
(Typ. Ta=25 C, VR=5 V, 2856 K)
PHOTO
CURRENT
0.1
1
10
10 nA
100 nA
1 A
10 mA
1 mA
100 A
10 A
100
1000
AMBIENT TEMPERATURE (C)
DARK
CURRENT
1 nA
100 nA
10 A
10 nA
1 A
100 pA
050
25
75
100
(Typ. VR=5 V)
1000
100
10
1
0.1
100
1 k
10 k
LOAD RESISTANCE (
)
100 k
1 M
RISE/FALL
TIME
(ms)
(Typ. Ta=25 C, VR=7.5 V,
λ=560 nm, Vo=2.5 V)
tr
tf
2
CATHODE
ANODE
Tolerance unless otherwise
noted: ±0.2
Active area position accuracy: X, Y
±0.3
Electrodes
0.4
3.2 ± 0.2
0.4
0.13
2.3
2.2
1.4
±
0.1
2.7
(4 ×) 0.5
CENTER OF ACTIVE AREA
ACTIVE AREA 0.32 × 0.46
2.0 ± 0.1
0.25
±
0.15
0.6
1.1
±
0.1
PHOTOSENSITIVE
SURFACE
KPICB0078EC
s Dimensional outlines (unit: mm)
s Spectral response
0.1
0.2
0.3
0.4
0.5
0.7
0.9
0.6
0.8
1.0
0
200
400
600
800
WAVELENGTH (nm)
1000
1200
RELATIVE
SENSITIVITY
(Typ. Ta=25 C, VR=5 V)
S9066-111
S9067-101
HUMAN EYE
SENSITIVITY
KPICB0076EB
s Dark current vs. ambient temperature
KPICB0115EA
s Rise/fall times vs. load resistance
S9066-111
S9067-101
PHOTOSENSITIVE
SURFACE
10
5
10
5
0.75
±
0.15
10
5
10
5
0.25
+0.15
-0.1
1.0
2.0
2.0 (DEPTH 0.15)
ANODE
(ANODE)
NC
CATHODE
Tolerance unless otherwise
noted: ±0.1, ±2
Shaded area indicates burr.
Values in parentheses indicate
reference value.
5.2 ± 0.3
(INCLUDIG BURR)
CENTER OF ACTIVE AREA
ACTIVE AREA 0.46 × 0.32
5.2
±
0.3
(INCLUDIG
BURR)
(SPECIFIED AT THE LEAD ROOT)
(2 ×)
1.0
(DEPTH 0.15)
2.5 ± 0.2
5.0
2.05
±
0.2
5.0
16.5
±
1.0
(0.8)
(1.0)
1.2
±
0.2
1.27 1.27 1.27
(4 ×) 0.55
(4 ×) 0.45
KPICA0050EE
KPICA0051EC
s Operating circuit example
KPICC0091EB
PHOTODIODE
FOR SIGNAL OFFSET
CATHODE
ANODE
CL
RL
Vout
REVERSE BIAS
POWER SUPPLY
THE DRAWING SURROUNDED
BY THE DOTTED LINE SHOWS
A SCHEMATIC DIAGRAM OF
THE PHOTO IC.
CURRENT AMP
(APPROX. 30000 times)
PHOTODIODE
FOR SIGNAL DETECTION
INTERNAL PROTECTION
RESISTANCE
(APPROX. 150
9)
The photo IC diode must be reverse-
biased so that a positive potential
is applied to the cathode.
To eliminate high-frequency
components, we recommend
placing a load capacitance CL in
parallel with load resistance RL as
a low-pass filter.
Cut-off frequency fc =
2
πCLRL
1
.
s Linearity (S9066-111)
KPICB0083EB
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