参数资料
型号: SLD322XT-2
元件分类: 激光器
英文描述: 810 nm, LASER DIODE
封装: M-273(LO-10), 8 PIN
文件页数: 3/8页
文件大小: 83K
代理商: SLD322XT-2
– 3 –
SLD322XT
Example of Representative Characteristics
Optical power output vs. Forward current characteristics
IF – Forward current [mA]
0
200
400
600
800
1000
200
400
600
800
1000
Po
Optical
power
output
[mW]
Tth = –10
°C
Tth = 0
°C
Tth = 25
°C
Tth = 30
°C
Optical power output vs. Monitor current characteristics
Imon – Monitor current [mA]
0
0.5
1.0
0
250
500
Po
Optical
power
output
[mW]
Tth = –10
°C
Tth = 0
°C
Tth = 25
°C
Tth = 30
°C
Threshold current vs. Temperature characteristics
Tth – Thermistor temperature [
°C]
–10
0
102030
100
500
1000
Ith
Threshold
current
[mA]
Temperature dependence of far field pattern
(Parallel to junction)
Angle [degree]
–90
–60
–30
0
30
60
90
Radiation
intensity
(optional
scale)
PO = 500mW
Tth = –5
°C
Tth = 10
°C
Tth = 25
°C
Power dependence of far field pattern
(Parallel to junction)
Angle [degree]
–90
–60
–30
0
30
60
90
Radiation
intensity
(optional
scale)
Tth = 25
°C
PO = 500mW
PO = 400mW
PO = 300mW
PO = 200mW
PO = 100mW
Power dependence of far field pattern
(Perpendicular to junction)
Angle [degree]
–90
–60
–30
0
306090
Radiation
intensity
(optional
scale)
Tth = 25
°C
PO = 500mW
PO = 400mW
PO = 300mW
PO = 200mW
PO = 100mW
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