参数资料
型号: SLDA-61S16-02
元件分类: 光敏二极管
英文描述: PHOTO DIODE
文件页数: 1/1页
文件大小: 13K
代理商: SLDA-61S16-02
5200 St. Patrick St., Montreal
The Old Railway, Princes Street
Que., H4E 4N9, Canada
Ulverston, Cumbria, LA12 7NQ, UK
Tel: 514-768-8000
Tel: 01 229 581 551
Fax: 514-768-8889
Fax: 01 229 581 554
QF-84
SLDA-61S16-XX Series
Multielement Array
Features
Diodes spaced on 1.57 mm centers
Contacts along both edges of the array
Common cathode contact on the back
Solderable anode contacts on top surface
Up to 16 elements per monolithic array
Description
The Silonex SLDA-61S16-XX series of photodiode
arrays are monolithic devices that can be used in
precision position sensing applications.
The array
can be easily bonded with conductive epoxy to a
ceramic or other substrate. The conductive epoxy
provides the electrical connection to the common
cathode contact.
Absolute Maximum Ratings
Storage Temperature
-40 to +125
°C
Operating Temperature
-40 to +125
°C
Soldering Temperature
260
°C for 2 sec
Active Area
(2.31 sq.mm. or
0.00358 sq.in.)
Dimensions in mm.
Tolerance +/- 0.025 mm
unless otherwise noted.
(0.062")
(0.069")
1.32
1.57
2.26
0.25
1.75
2.41 - 2.46
To order this part the ‘XX’ refers to the number of
elements in the array (from 02 to 16 elements).
Electrical Characteristics (per element, TA=25
°C unless otherwise noted)
Symbol Parameter
MIN TYP MAX UNITS
TEST CONDITIONS
ISC
Short Circuit Current
80
120
A
VR = 0V, Ee = 25 mW/cm
2 (1)
VOC
Open Circuit Voltage
0.40
V
Ee = 25 mW/cm
2 (1)
ID
Dark Current
3
A
Ee = 0, VR = 1V
VBR
Breakdown Voltage
20
V
IR = 100
A
TCI
Temp. Coef., ISC
+0.2
%/
°C (1)
CJ
Junction Capacitance
150
pF
F = 1 Mhz, VR = 0
λ
P
Maximum Sensitivity Wavelength
930
nm
λ
R
Sensitivity Spectral Range
400
1100
nm
Specifications subject to change without notice.
103077 REV 2
Note:
(1) Ee = light source @ 2854
°K
相关PDF资料
PDF描述
SLDA-61S16-04 PHOTO DIODE
SLDA-61S16-08 PHOTO DIODE
SLDA-61S16-03 PHOTO DIODE
SLDA-61S16-05 PHOTO DIODE
SLDA-61S16-07 PHOTO DIODE
相关代理商/技术参数
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