参数资料
型号: SLDA-61S25-06
元件分类: 光敏二极管
英文描述: PHOTO DIODE
文件页数: 1/1页
文件大小: 13K
代理商: SLDA-61S25-06
5200 St. Patrick St., Montreal
The Old Railway, Princes Street
Que., H4E 4N9, Canada
Ulverston, Cumbria, LA12 7NQ, UK
Tel: 514-768-8000
Tel: 01 229 581 551
Fax: 514-768-8889
Fax: 01 229 581 554
QF-84
SLDA-61S25-XX Series
Multielement Array
Features
Diodes spaced on 2.54 mm centers
Common cathode contact on the back
Solderable anode contacts on top surface
Up to 8 elements per monolithic array
Description
The Silonex SLDA-61S25-XX series of photodiode
arrays are monolithic devices that can be used in
precision position sensing applications.
The array
can be bonded with conductive epoxy to a ceramic or
other substrate. The conductive epoxy provides the
electrical connection to the common cathode contact.
Absolute Maximum Ratings
Storage Temperature
-40 to +125
°C
Operating Temperature
-40 to +125
°C
Soldering Temperature
260
°C for 2 sec
Active Area
(9.595 sq.mm.
0.0148 sq.in.)
(0.165")
(0.1")
(0.090")
Dimensions in mm.
Tolerance +\- 0.013 mm.
unless otherwise noted.
(0.2")
2.29
1.27
2.54
4.83
0.51
4.19
5.08 typ.
To order this part the ‘XX’ refers to the number of
elements in the array (from 02 to 08 elements).
Electrical Characteristics (per element, TA=25
°C unless otherwise noted)
Symbol Parameter
MIN TYP MAX UNITS
TEST CONDITIONS
ISC
Short Circuit Current
350
450
A
VR = 0V, Ee = 25 mW/cm
2 (1)
VOC
Open Circuit Voltage
0.40
V
Ee = 25 mW/cm
2 (1)
ID
Dark Current
3
A
Ee = 0, VR = 1V
VBR
Breakdown Voltage
20
V
IR = 100
A
TCI
Temp. Coef., ISC
+0.2
%/
°C (1)
CJ
Junction Capacitance
400
pF
F = 1 Mhz, VR = 0
λ
P
Maximum Sensitivity Wavelength
930
nm
λ
R
Sensitivity Spectral Range
400
1100
nm
Specifications subject to change without notice.
103078 REV 1
Note:
(1) Ee = light source @ 2854
°K
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