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参数资料
| 型号： | SLDB052S |
| 厂商： | RECTRON LTD |
| 元件分类： | 桥式整流 |
| 英文描述： | 0.5 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE |
| 封装： | ROHS COMPLIANT, PLASTIC, SLDBS, 4 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 195K |
| 代理商： | SLDB052S |
INSTANTANEOUS FORWARD VOLTAGE, (V)
PERCENT RATED PEAK REVERSE VOLTAGE, (%)
INSTANTANEOUS
FORWARD
CURRENT,
(A)
0
0.01
0.1
1
10
AVERAGE
FORWARD
CURRENT,
(A)
0
5
10
15
20
25
30
1.6
1.2
0.4
0.8
2.0
100
40
60
20
10
6
4
2
0
1.0
0.1
10
100
1000
40
20
60
80
100
120
140
RATING AND CHARACTERISTICS CURVES ( SLDB051S THRU SLDB057S )
FIG.3 TYPICAL REVERSE CHARACTERISTICS
FIG.2 TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
AMBIENT TEMPERATURE, (OC)
INSTANTANEOUS
REVERSE
CURRENT,
(uA)
20
0
0.5
1.0
1.5
80
40
60
100
120
140 150
FIG.4 TYPICAL FORWARD CURRENT
DERATING CURVE
NUMBER OF CYCLES AT 60Hz
PEAK
FORWARD
SURGE
CURRENT,
(A)
8.3mS Single Half Sine-Wave
JEDEC Method
FIG. 1 - MAXIMUM NON-REPETITIVE
FORWARD SURGE CURRENT
TJ = 25 OC
Pulse Width = 300mS
1% Duty Cycle
TA = 25 OC
TA = 125 OC
60 Hz RESISTIVE OR
INDUCTIVE LOAD
相关PDF资料 |
PDF描述 |
|---|---|
| SLVG3.3 | 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| SLVE2.8.TG | 300 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| SLVU2.8-8.TB | 600 W, UNIDIRECTIONAL, 8 ELEMENT, SILICON, TVS DIODE, MS-012AA |
| SLVU2.8-8A1 | 600 W, UNIDIRECTIONAL, 8 ELEMENT, SILICON, TVS DIODE |
| SLVU2.8-4A1 | 600 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SLDB053S | 制造商:RECTRON 制造商全称:Rectron Semiconductor 功能描述:SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER |
| SLDB054S | 制造商:RECTRON 制造商全称:Rectron Semiconductor 功能描述:SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER |
| SLDB055S | 制造商:RECTRON 制造商全称:Rectron Semiconductor 功能描述:SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER |
| SLDB056S | 制造商:RECTRON 制造商全称:Rectron Semiconductor 功能描述:SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER |
| SLDB057S | 制造商:RECTRON 制造商全称:Rectron Semiconductor 功能描述:SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER |
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