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| 型号： | SLSD-71N8/3 |
| 元件分类： | 光敏二极管 |
| 英文描述： | PHOTO DIODE |
| 文件页数： | 1/1页 |
| 文件大小： | 24K |
| 代理商： | SLSD-71N8/3 |
5200 St. Patrick St., Montreal
The Old Railway, Princes Street
Que., H4E 4N9, Canada
Ulverston, Cumbria, LA12 7NQ, UK
Tel: 514-768-8000
Tel: 01 229 581 551
Fax: 514-768-8889
Fax: 01 229 581 554
QF-84
SLSD-71N8
SLSD-71N8 / #
Solderable Planar Photodiode
Features
Visible to IR spectral irradiance range
High reliability
Oxide passivation
Linear short circuit current
Low capacitance, high speed
Protective coating
Available in arrays where # indicates number of
elements ( maximum of 8 elements )
Description
The Silonex series of silicon solderable planar
photodiodes feature low cost, high reliability, and
linear short circuit current over a wide range of
illumination. These devices are widely used for light
sensing and power generation because of their
stability and high efficiency.
They are particularly
suited to power conversion applications due to their
low internal impedance and relatively high shunt
impedance, stability, and humidity characteristics.
These devices also provide a reliable, inexpensive
detector for applications such as light beam sensing
and instrumentation. The electrical characteristics
below are per element.
In the multielement arrays
the cathodes are common to a single cathode wire.
Absolute Maximum Ratings
Storage Temperature
-40
°C to +105°C
Operating Temperature
-40
°C to +105°C
0.8
1.3
3.4
+Red
(Anode)
-Blk
(Cathode)
Sensitive Area
(2.7 sq. mm.)
Dimensions in mm.
150 nom
#32 AWG Wire
4.8
Nom.
Also available without leads as part number SLCD-61N8
1.0
0.8
0.6
0.4
100°
90°
80°
70°
60°
50°
40°
30°
20°
10°
Half Angle = 60°
Directional Sensitivity Characteristics
20°
40°
60°
80°
100°
120°
0.0
0.2
0.4
0.6
0.8
1.0
Electrical Characteristics (TA=25
°C unless otherwise noted)
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
ISC
Short Circuit Current
100
170
A
VR=0V, Ee=25mW/cm
2 (1)
VOC
Open Circuit Voltage
0.40
V
Ee=25mw/cm
2
(1)
ID
Reverse Dark Current
1.7
A
VR=5V, Ee=0
CJ
Junction Capacitance
100
pF
VR=0V, Ee=0, f=1MHz
Sλ
Spectral Sensitivity
0.55
A/W
λ=940nm
VBR
Reverse Breakdown Voltage
20
V
IR=100
A
λ
P
Maximum Sensitivity Wavelength
930
nm
λ
R
Sensitivity Spectral Range
400
1100
nm
θ
1/2
Acceptance Half Angle
60
deg
Notes: (1) Ee = light source @ 2854
°K
Specifications subject to change without notice
103193 REV 2
相关PDF资料 |
PDF描述 |
|---|---|
| SLSD-71N8/5 | PHOTO DIODE |
| SLSD-71N8/8 | PHOTO DIODE |
| SLCD-61N8/8 | PHOTO DIODE |
| SLSD-71N8 | PHOTO DIODE |
| SLCD-61N8/2 | PHOTO DIODE |
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