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参数资料
| 型号： | SLVU2.8-4A1 |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 600 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE |
| 封装： | ROHS COMPLIANT, SOP-8 |
| 文件页数： | 3/8页 |
| 文件大小： | 194K |
| 代理商： | SLVU2.8-4A1 |
SLVU2.8
Characteristics
Doc ID 16191 Rev 1
3/8
Figure 2.
Relative peak pulse power versus
initial junction temperature
Figure 3.
Junction capacitance versus
frequency (SLVU2.8-4A1)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0
25
50
75
100
125
150
P [T initial] / P [T initial = 25 °C]
PP
j
PP
j
0
1
2
3
4
5
10
100
1000
F(MHz)
Pin 1- 2
Pin 3- 4
Pin 5- 6
Pin 7- 8
SLVU2.8-4A1
Vosc = 30 mVRMS
Tj = 25 °C
C(pF)
Figure 4.
Junction capacitance versus
frequency (SLVU2.8-8A1)
Figure 5.
Junction capacitance versus
reverse applied voltage
(typical values)
0
1
2
3
4
5
10
100
1000
0
1
2
3
4
5
Vosc = 30 mVRMS
Tj = 25 °C
C(pF)
Pin 1- 2
Pin 3- 4
Pin 5- 6
Pin 7- 8
SLVU2.8-8A1
F(MHz)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0123
F = 1 MHz
Vosc = 30 mV
Tj = 25 °C
RMS
SLVU2.8-4A1
SLVU2.8-8A1
V (V)
R
C(F)
Figure 6.
Leakage current versus junction
temperature (typical values)
Figure 7.
S21 attenuation (typical value)
Vr = Vrm
1
10
100
25
50
75
100
125
150
I (nA)
r
T (°C)
j
300k
1M
3M
10M
30M
100M 300M
1G
3G
-8
-6
-4
-2
0
1G
-
F(Hz)
dB
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