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参数资料
| 型号： | SM15T150/9 |
| 厂商： | GENERAL SEMICONDUCTOR INC |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| 封装： | PLASTIC, SMC, 2 PIN |
| 文件页数： | 3/3页 |
| 文件大小： | 56K |
| 代理商： | SM15T150/9 |
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
C
J
–
J
u
n
c
ti
o
n
C
a
p
a
c
it
a
n
c
e
(p
F
)
Fig. 4 – Typical Junction Capacitance
Uni-Directional
0
25
50
75
100
0
75
25
50
100
125
150
175
200
P
e
a
k
P
u
ls
e
P
o
w
e
r
(P
P
)
o
r
C
u
rr
e
n
t
(I
P
)
D
e
ra
ti
n
g
in
P
e
rc
e
n
ta
g
e
,
%
TA – Ambient Temperature (
°C)
10
100
1,000
10,000
20,000
10
1
100
400
VWM – Reverse Stand-Off Voltage (V)
1
10
100
400
10
VWM – Reverse Stand-Off Voltage (V)
Fig. 2 – Pulse Derating Curve
P
M
–
P
e
a
k
P
u
ls
e
P
o
w
e
r
(k
W
)
Fig. 1 – Peak Pulse Power Rating Curve
0.1
1
10
100
0.1
s
1.0
s
10
s
td – Pulse Width (sec.)
100
s
1.0ms
10ms
0.31 x 0.31" (8.0 x 8.0mm)
Copper Pad Areas
0
50
100
150
I P
P
M
–
P
e
a
k
P
u
ls
e
C
u
rr
e
n
t,
%
I R
S
M
Fig. 3 – Pulse Waveform
1,000
100
10,000
C
J
–
C
a
p
a
c
it
a
n
c
e
,
p
F
TJ = 25
°C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of IPPM
tr = 10
sec.
Peak Value
IPPM
Half Value – IPP
IPPM
2
td
10/1000
sec. Waveform
as defined by R.E.A.
TJ = 25
°C
f = 1.0MHz
Vsig = 50mVp-p
Measured at
Zero Bias
VR, Measured at
Stand-Off
Voltage, VWM
0
1.0
2.0
3.0
4.0
t – Time (ms)
TJ = 25
°C
f = 1.0 MHZ
Vsig = 50mVp-p
Measured at
Zero Bias
Measured at
Stand-Off
Voltage, VWM
Fig. 5 – Typical Junction Capacitance
Bi-Directional
Fig. 6 - Maximum Non-Repetitive Forward
Surge Current Uni-Directional Use Only
1
10
100
10
100
200
P
e
a
k
F
o
rw
a
rd
S
u
rg
e
C
u
rr
e
n
t,
A
m
p
e
re
s
Number of Cycles at 60 Hz
SM15T Series
Surface Mount TRANSZORB
Transient Voltage Suppressor
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
TJ=TJ max.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SM15T150A | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Surface Mount TRANSZORB? Transient Voltage Suppressors |
| SM15T150A/1T | 功能描述:TVS 二极管 - 瞬态电压抑制器 1.5KW 150V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SM15T150A/57T | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 150V 5% Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SM15T150A/59T | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 150V 5% Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SM15T150A/7T | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 150V 5% Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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