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参数资料
| 型号： | SM15T30CAHE3/57T |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| 封装： | ROHS COMPLIANT, PLASTIC, SMC, 2 PIN |
| 文件页数： | 3/5页 |
| 文件大小： | 0K |
| 代理商： | SM15T30CAHE3/57T |
SM15T Series
Vishay General Semiconductor
Document Number: 88380
Revision: 21-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Figure 1. Peak Pulse Power Rating Curve
Figure 2. Pulse Power or Current vs. Initial Junction Temperature
Figure 3. Pulse Waveform
0.1
1
10
100
P
PPM
-
P
eak
P
u
lse
P
o
w
er
(k
W
)
td - Pulse Width (s)
0.31 x 0.31" (8.0 x 8.0 mm)
Copper Pad Areas
0.1 s
1.0 s
10 s
100 s
1.0 ms
10 ms
0
25
50
75
100
75
50
25
0
125
150
175
200
TJ - Initial Temperature (°C)
Pe
a
k
P
u
lse
P
o
w
er
(P
PP
)or
C
u
rrent
(I
PP
)
Der
ating
in
P
e
rcentage
,%
0
50
100
150
t
r = 10 s
Peak Value
I
PPM
Half Value -
I
PPM
I
PP
2
t
d
10/1000 s Waveform
as defined by R.E.A.
0
1.0
2.0
3.0
4.0
t - Time (ms)
I PPM
-
P
e
ak
P
u
lse
C
u
rrent,
%
I
RSM
T
J = 25 °C
Pulse Width (t
d)
is defined as the Point
where the Peak Current
decays to 50 % of I
PPM
Figure 4. Typical Junction Capacitance Uni-Directional
Figure 5. Typical Transient Thermal Impedance
Figure 6. Maximum Non-Repetitive Forward Surge Current
Uni-Directional Use Only
10
100
1000
10 000
20 000
10
1
100
400
Uni-Directional
Bi-Directional
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
Measured at
Zero Bias
V
R, Measured at
Stand-Off
Voltage, V
WM
C
J-
J
u
nction
Capacitance
(pF)
VWM - Reverse Stand-Off Voltage (V)
0.1
1.0
10
100
0.001
0.01
0.1
10
1
100
1000
t - Pulse Duration (s)
T
ransient
Ther
mal
Impedance
(°C/
W
)
1
10
100
10
100
200
T
J = TJ max.
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
P
e
ak
F
o
rw
ard
S
u
rge
C
u
rrent
(A)
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| SM15T30CAY | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500 W 10kW Transil 5.8V tp 70V BI RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SM15T33A | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 33V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SM15T33A | 制造商:STMicroelectronics 功能描述:DIODE TVS SMC 1500W 33V |
| SM15T33A/57T | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 33V 5% Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SM15T33A/59T | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 33V 5% Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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