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参数资料
| 型号： | SM15T33CA/9T-E3 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| 封装： | PLASTIC, SMC, 2 PIN |
| 文件页数： | 3/3页 |
| 文件大小： | 68K |
| 代理商： | SM15T33CA/9T-E3 |
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
C
J
–
J
unction
Capacitance
(pF)
Fig. 4 – Typical Junction Capacitance
Uni-Directional
0
25
50
75
100
0
75
25
50
100
125
150
175
200
P
eak
Pulse
P
o
w
er
(P
PP
)or
Current
(I
PP
)
Der
ating
in
P
ercentage
,%
TA – Ambient Temperature (
°C)
10
100
1,000
10,000
20,000
10
1
100
400
VWM – Reverse Stand-Off Voltage (V)
Fig. 2 – Pulse Derating Curve
P
PPM
–
P
eak
Pulse
P
o
w
er
(kW)
Fig. 1 – Peak Pulse Power Rating Curve
0.1
1
10
100
0.1
s
1.0
s10s
td – Pulse Width (sec.)
100
s
1.0ms
10ms
0.31 x 0.31" (8.0 x 8.0mm)
Copper Pad Areas
0
50
100
150
I PPM
–
P
eak
Pulse
Current,
%
I
RSM
Fig. 3 – Pulse Waveform
TJ = 25
°C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of IPPM
tr = 10
sec.
Peak Value
IPPM
Half Value – IPP
IPPM
2
td
10/1000
sec. Waveform
as defined by R.E.A.
TJ = 25
°C
f = 1.0MHz
Vsig = 50mVp-p
Measured at
Zero Bias
VR, Measured at
Stand-Off
Voltage, VWM
0
1.0
2.0
3.0
4.0
t – Time (ms)
Fig. 6 - Maximum Non-Repetitive Forward
Surge Current Uni-Directional Use Only
1
10
100
10
100
200
P
eak
F
orw
ard
Surge
Current,
Amperes
Number of Cycles at 60Hz
8.3ms Single Half Sine-Wave
(JEDEC Method)
TJ = TJ max.
Uni-Directional
Bi-Directional
tp – Pulse Duration (sec)
T
ransient
Ther
mal
Impedance
(
°C/W)
Fig. 5 – Typical Transient Thermal
Impedance
0.1
1.0
10
100
0.001
0.01
0.1
1
10
100
1000
SM15T Series
Surface Mount TRANSZORB
Transient Voltage Suppressor
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相关代理商/技术参数 |
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|---|---|
| SM15T33CA-E3/1T | 功能描述:TVS 二极管 - 瞬态电压抑制器 1.5KW 33V 5% Bidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SM15T33CA-E3/51T | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 33V 5% Bi RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SM15T33CA-E3/57T | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 33V 5% Bi RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SM15T33CA-E3/59T | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 33V 5% Bi RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SM15T33CA-E3/9AT | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 33V 5% Bi RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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