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参数资料
| 型号： | SM24T1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | TVS DIODE ARRAY 24V SOT-23 |
| 标准包装： | 3,000 |
| 电压 - 反向隔离（标准值）： | 24V |
| 电压 - 击穿： | 26.7V |
| 功率（瓦特）： | 300W |
| 电极标记： | 双向，单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 带卷 (TR) |
SM05T1G Series, SZSM05T1G
MAXIMUM RATINGS
Rating
Peak Power Dissipation @ 20 m s (Note 1) @ T L ? 25 ? C
IEC 61000 ? 4 ? 2 (ESD)
Air
Contact
IEC 61000 ? 4 ? 4 (EFT)
IEC 61000 ? 4 ? 5 (Lightening)
Total Power Dissipation on FR ? 5 Board (Note 2) @ T A = 25 ? C
Derate above 25 ? C
Thermal Resistance, Junction ? to ? Ambient
Total Power Dissipation on Alumina Substrate (Note 3) @ T A = 25 ? C
Derate above 25 ? C
Thermal Resistance, Junction ? to ? Ambient
Junction and Storage Temperature Range
Lead Solder Temperature ? Maximum (10 Second Duration)
Symbol
P pk
? P D ?
R q JA
? P D
R q JA
T J , T stg
T L
Value
300
? 15
? 8.0
40
12
225
1.8
556
300
2.4
417
? 55 to +150
260
Unit
W
kV
A
A
? mW ?
mW/ ? C
? C/W
? mW
mW/ ? C
? C/W
? C
? C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Non ? repetitive current pulse per Figure 3
2. FR ? 5 = 1.0 x 0.75 x 0.62 in.
3. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina
NOTE: Other voltages may be available upon request
ELECTRICAL CHARACTERISTICS
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Symbol
I PP
V C
V RWM
I R
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I PP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V RWM
I F
I
I R V F
V BR
I T
Q V BR
Breakdown Voltage @ I T
Test Current
Maximum Temperature Coefficient of V BR
V C V BR V RWM
I T
V
I F
V F
Forward Current
Forward Voltage @ I F
Z ZT
I ZK
Z ZK
Maximum Zener Impedance @ I ZT
Reverse Current
Maximum Zener Impedance @ I ZK
I PP
Uni ? Directional TVS
ELECTRICAL CHARACTERISTICS (T A = 25 ? C unless otherwise noted)
V RWM
I R @ V RWM
V BR , Breakdown Voltage
(Volts)
I T
V C @
I PP =
1 Amp
Max I PP
(Note 4)
Typical
Capacitance
(pF)
Device*
SM05T1G
SM12T1G
SM15T1G
SM24T1G
SM36T1G
Device
Marking
05M
12M
15M
24M
36M
(Volts)
5
12
15
24
36
( m A)
10
1.0
1.0
1.0
1.0
Min
6.2
13.3
16.7
26.7
40.0
Max
7.3
15.75
19.6
31.35
46.95
mA
1.0
1.0
1.0
1.0
1.0
(Volts)
9.8
19
24
43
60
(Amps)
17
12
10
5.0
4.0
Pin 1 to 3
@ 0 Volts
225
95
100
60
45
4. 8 ? 20 m s pulse waveform per Figure 3
*Include SZ-prefix devices where applicable.
http://onsemi.com
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