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参数资料
| 型号： | SM2T6V8A |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 200 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-216AA |
| 封装： | STMITE PACKAGE-2 |
| 文件页数： | 1/6页 |
| 文件大小： | 51K |
| 代理商： | SM2T6V8A |
1/6
SM2T
TRANSIL
REV. 3
K
A
STmite
(JEDEC DO-216AA)
January 2005
FEATURES
■ High Peak pulse power:
200 W (10/1000 s )
1000 W ( 8/20 s)
■ Stand-off voltage range 5 to 24V
■ Unidirectional types
■ Low clamping factor VCL/VBR
■ Fast response time
■ 1.0mm overall component height
DESCRIPTION
The SM2T series are Transil diodes designed spe-
cifically for portable equipment and miniaturized
electronics devices subject to ESD transient over-
voltages.
Fully compatible with pick and place equipment
and inspectable soldering joints.
Table 2: Absolute Ratings (Tamb = 25°C)
Table 3: Thermal Resistances
Symbol
Parameter
Value
Unit
PPP
Peak pulse power dissipation (see note 1)
Tj initial = Tamb
200
W
P
Power dissipation on infinite heatsink
Tamb = 100°C
2.5
W
IFSM
Non repetitive surge peak forward current
tp = 10 ms
Tj initial = Tamb
25
A
Tstg
Tj
Storage temperature range
Maximum junction temperature
-65 to 175
150
°C
TL
Maximum lead temperature for soldering during 10 s.
260
°C
Note 1: 10/1000s pulse waveform.
Symbol
Parameter
Value
Unit
Rth(j-t)
Junction to tab
20
°C/W
Rth(j-a) Junction to ambient on PCB with recommended pad layout
250
°C/W
Table 1: Order Codes
Part Number
Marking
SM2T6V8A
MUA
SM2T14A
MUE
SM2T18A
MUG
SM2T27A
MUJ
相关PDF资料 |
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| SM2T27A | 200 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-216AA |
| SM2T14A | 200 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-216AA |
| SM30KPA100 | 30000 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| SM30KPA220A | 30000 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| SM30KPA75CA | 30000 W, BIDIRECTIONAL, SILICON, TVS DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
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