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参数资料
| 型号： | SM5A27/2D |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 3600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-218AB |
| 封装： | PLASTIC PACKAGE-1 |
| 文件页数： | 1/3页 |
| 文件大小： | 28K |
| 代理商： | SM5A27/2D |
SM5A27
Vishay Semiconductors
formerly General Semiconductor
Document Number 88381
www.vishay.com
08-Oct-02
1
Surface Mount Automotive Transient Voltage Suppressor
Zener Voltage 27V Peak Pulse Current 70A (10/10,000
s)
Peak Pulse Power 3600W (10/1000
s)
0.093(2.4)
0.116(3.0)
0.059(1.5)
0.098(2.5)
0.138(3.5)
0.366(9.3)
0.343(8.7)
0.406(10.3)
0.382(9.7)
0.342(8.7)
0.327(8.3)
0.413(10.5)
0.374(9.5)
0.539(13.7)
0.524(13.3)
LEAD 2/METAL HEATSINK
0.020(0.5)
0.028(0.7)
0.016 (0.4) Min.
0.197(5.0)
0.185(4.7)
LEAD 1
0.628(16.0)
0.592(15.0)
Patented*
*Patent #’s:
4,980,315
5,166,769
5,278,095
DO-218AB
Features
Ideally suited for load dump protection
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
High temperature stability due to unique oxide passiva-
tion and patented PAR
construction
Integrally molded heatsink provides a very low thermal
resistance for maximum heat dissipation
Low leakage current at TJ = 175°C
High temperature soldering guaranteed:
260°C for 10 seconds at terminals
Meets ISO7637-2 surge spec.
Low forward voltage drop
Maximum Ratings and Thermal Characteristics (TC = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Steady state power dissipation
PD
5.0
W
Non-repetitive peak reverse surge current for 10
s/10ms
exponentially decaying waveform
IRSM
70
A
Maximum working stand-off voltage
VWM
22.0
V
Peak forward surge current 8.3ms single half sine-wave
IFSM
500
A
Typical thermal resistance junction to case
R
θJC
1.0
°C/W
Operating junction and storage temperature range
TJ, TSTG
–55 to +175
°C
0.413(10.5)
0.374(9.5)
0.366(9.3)
0.343(8.7)
0.606(15.4)
0.583(14.8)
0.150(3.8)
0.126(3.2)
0.091(2.3)
0.067(1.7)
0.116(3.0)
0.093(2.4)
Mounting Pad Layout
Mechanical Data
Case: Molded plastic body, surface mount with heatsink
integrally mounted in the encapsulation
Terminals: Plated, solderable per MIL-STD-750, Method 2026
Polarity: Heatsink is anode
Mounting Position: Any
Weight: 0.091 oz., 2.58 g
Packaging codes/options:
2D/750 per 13" Reel (16mm Tape),
anode towards sprocket hole, 4.5K/box
2E/750 per 13" Reel (16mm Tape),
cathode towards sprocket hole, 4.5K/box
Dimensions in
inches and (millimeters)
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| SM5S11A | 3600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-218AB |
| SM5S12/2E | 3600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-218AB |
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相关代理商/技术参数 |
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|---|---|
| SM5A27-E3/2D | 功能描述:TVS 二极管 - 瞬态电压抑制器 3600W 27V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SM5A27-E3/2E | 功能描述:TVS 二极管 - 瞬态电压抑制器 3600W 27V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SM5A27HE3/2D | 功能描述:TVS 二极管 - 瞬态电压抑制器 5W 27V +/-3V RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SM5A27HE3/2E | 功能描述:TVS 二极管 - 瞬态电压抑制器 5W 27V +/-3V RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SM5A27HE3-2D | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Surface Mount PAR Transient Voltage Suppressors |
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