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参数资料
| 型号： | SM5S36HE3/2D |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 3600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-218AB |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-1 |
| 文件页数： | 1/5页 |
| 文件大小： | 81K |
| 代理商： | SM5S36HE3/2D |
Document Number: 88382
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 18-Apr-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
186
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount PAR Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
SM5S10 thru SM5S36A
Vishay General Semiconductor
FEATURES
Junction passivation optimized design passivated
anisotropic rectifier technology
TJ = 175 °C capability suitable for high reliability
and automotive requirement
Available in uni-directional polarity only
Low leakage current
Low forward voltage drop
High surge capability
Meets ISO7637-2 surge specification (varied by test
condition)
Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C
AEC-Q101 qualified
Compliant
to
RoHS
Directive
2002/95/EC
and
in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting,
especially for automotive load dump protection application.
MECHANICAL DATA
Case: DO-218AB
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity: Heatsink is anode
Note
(1) Non-repetitive current pulse at TA = 25 °C
PRIMARY CHARACTERISTICS
VWM
10 V to 36 V
PPPM (10 x 1000 μs)
3600 W
PPPM (10 x 10 000 μs)
2800 W
PD
5 W
IFSM
500 A
TJ max.
175 °C
DO-218AB
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Peak pulse power dissipation
with 10/1000 μs waveform
PPPM
3600
W
with 10/10 000 μs waveform
2800
Power dissipation on infinite heatsink at TC = 25 °C (fig. 1)
PD
5.0
W
Peak pulse current with 10/1000 μs waveform
IPPM (1)
See next table
A
Peak forward surge current 8.3 ms single half sine-wave
IFSM
500
A
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 175
°C
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