参数资料
型号: SM6S15A/2D
厂商: VISHAY SEMICONDUCTORS
元件分类: TVS二极管 - 瞬态电压抑制
英文描述: 4600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-218AB
封装: PLASTIC PACKAGE-1
文件页数: 3/4页
文件大小: 54K
代理商: SM6S15A/2D
SM6S Series
Vishay Semiconductors
formerly General Semiconductor
Document Number 88384
www.vishay.com
01-Aug-02
3
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Power Derating Curve
0
2.0
4.0
6.0
8.0
0
50
100
150
200
P
o
w
er
Dissipation
(W)
Re
v
erse
Surge
P
o
w
er
(W)
Pulse Width (ms) – 1/2 IPP Exponential Waveform
1,000
10,000
10
100
Case Temperature (
°C)
0
50
100
150
0
10
20
30
40
Input
P
eak
Pulse
Current
%
Time, ms (t)
Pulse Waveform
Reverse Power Capability
TA = 25
°C
Pulse width (td) is defined as
the point where the peak
current decays to 50% of IPP
td
tr = 10
s
Peak Value IPP
Half Value –
IPP
2
Load Dump Power Characteristics
(10ms Exponential Waveform)
0
2,000
1,000
3,000
4,000
5,000
6,000
25
50
75
100
125
150
175
Load
Dump
P
o
w
er
(W)
Case Temperature (
°C)
T
ransient
Ther
mal
Impedance
(
°C/W)
0.01
110
100
10
1
100
0.01
0.1
t – Pulse Width (sec.)
0.1
RΘJA
RΘJC
Typical Transient Thermal Impedance
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