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参数资料
| 型号： | SM6S36HE3/2D |
| 厂商： | Vishay General Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | TVS 6W 36V 10% SMD DO-218AB |
| 标准包装： | 750 |
| 电压 - 反向隔离（标准值）： | 36V |
| 电压 - 击穿： | 40V |
| 功率（瓦特）： | 4600W |
| 电极标记： | 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | DO-218AB |
| 供应商设备封装： | DO-218AB |
| 包装： | 带卷 (TR) |
SM6S10 thru SM6S36A
www.vishay.com
Vishay General Semiconductor
Surface Mount PAR ? Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES
? Junction passivation optimized design passivated
anisotropic rectifier technology
? T J = 175 °C capability suitable for high reliability
and automotive requirement
? Available in uni-directional polarity only
? Low leakage current
DO-218AB
PRIMARY CHARACTERISTICS
? Low forward voltage drop
? High surge capability
? Meets ISO7637-2 surge specification (varied by test
condition)
? Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C
? AEC-Q101 qualified
? Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
V WM
10 V to 36 V
V BR
P PPM (10 x 1000 μs)
P PPM (10 x 10 000 μs)
P D
I FSM
T J max.
Polarity
Package
11.1 V to 44.2 V
4600 W
3600 W
6W
600 A
175 °C
Uni-directional
DO-218AB
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting,
especially for automotive load dump protection application.
MECHANICAL DATA
Case: DO-218AB ?
Molding compound meets UL 94 V-0 flammability rating ?
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable
per
J-STD-002 and JESD 22-B102 ?
HE3 suffix meets JESD 201 class 2 whisker test
Polarity: Heatsink is anode
MAXIMUM RATINGS (T C = 25 °C unless otherwise noted)
PARAMETER
with 10/1000 μs waveform
SYMBOL
VALUE
4600
UNIT
Peak pulse power dissipation
with 10/10 000 μs waveform
P PPM
3600
W
Power dissipation on infinite heatsink at T C = 25 °C (fig. 1)
P D
6.0
W
Peak pulse current with 10/1000 μs waveform
I PPM
(1)
See next table
A
Peak forward surge current 8.3 ms single half sine-wave
Operating junction and storage temperature range
I FSM
T J , T STG
600
-55 to +175
A
°C
Note
(1) Non-repetitive current pulse at T
A = 25 °C
Revision: 18-Sep-12
1
Document Number: 88384
For technical questions within your region: DiodesAmericas@vishay.com , DiodesAsia@vishay.com , DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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