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参数资料
| 型号： | SM6T36A-E3/2C |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封装： | ROHS COMPLIANT, PLASTIC, SMB, 2 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 97K |
| 代理商： | SM6T36A-E3/2C |
Vishay General Semiconductor
SM6T Series
Document Number 88385
08-Sep-06
www.vishay.com
1
Surface Mount TRANSZORB Transient Voltage Suppressors
FEATURES
Low profile package
Ideal for automated placement
Glass passivated chip junction
600 W peak pulse power capability with a
10/1000 s waveform
Available in Unidirectional and Bidirectional
Excellent clamping capability
Low inductance
Meets MSL level 1, per J-STD-020C, LF max peak
of 260 °C
Solder Dip 260 °C, 40 seconds
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
MECHANICAL DATA
Case: DO-214AA (SMB)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: For unidirectional types the band denotes
cathode end, no marking on bidirectional types
DO-214AA (SMB)
DEVICES FOR BIDIRECTION APPLICATIONS
For
bidirectional
devices
use
CA
suffix
(e.g.
SM6T12CA).
Electrical characteristics apply in both directions.
MAJOR RATINGS AND CHARACTERISTICS
V(BR)
6.8 V to 220 V
PPPM
600 W
PD
5.0 W
IFSM (Unidirectional only)
100 A
Tj max.
150 °C
Note:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Peak pulse power dissipation on 10/1000 s waveform (1,2) (Fig. 1)
PPPM
Minimum 600
W
Peak power pulse current with a 10/1000 s waveform (1) (Fig. 3)
IPPM
see next table
A
Power dissipation on infinite heatsink TA = 50 °C
PD
5.0
W
Peak forward surge current 10 ms single half sine-wave uni-directional only (2)
IFSM
100
A
Operating junction and storage temperature range
TJ, TSTG
- 65 to +150
°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SM6T36AHE3/2C | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 36V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SM6T36AHE3/52 | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 36V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SM6T36AHE3/55 | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 36V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SM6T36AHE3/5B | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 36V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SM6T36A-M3/52 | 制造商:Vishay Semiconductors 功能描述:600W,36V 5%,UNIDIR,SMB TVS |
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