参数资料
型号: SM6T6V8CA
厂商: VISHAY SEMICONDUCTORS
元件分类: TVS二极管 - 瞬态电压抑制
英文描述: 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
封装: PLASTIC, SMBJ, 2 PIN
文件页数: 2/5页
文件大小: 103K
代理商: SM6T6V8CA
SM6T Series
Vishay General Semiconductor
www.vishay.com
Document Number: 88385
Revision: 04-Sep-07
82
Notes:
(1) For bi-directional devices add suffix “CA”
(2) VBR measured after IT applied for 300 s square wave pulse
(3) For bipolar devices with VR = 10 V or under, the IT limit is doubled
Note:
(1) Mounted on minimum recommended pad layout
Note:
(1) Automotive grade AEC Q101 qualified
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
TYPE (1)
DEVICE
MARKING
CODE
BREAKDOWN
VOLTAGE
VBR AT IT
(2)
(V)
TEST
CURRENT
(mA)
STAND-OFF
VOLTAGE
VRM
(V)
LEAKAGE
CURRENT (3)
IRM AT VRM
(A)
CLAMPING
VOLTAGE
VC AT IPP
10/1000 s
CLAMPING
VOLTAGE
VC AT IPP
8/20 s
α
T
Max
0-4/°C
UNI
BI
MIN
MAX
(V)
(A)
(V)
(A)
SM6T6V8A
KE7
6.45
7.14
10
5.80
1000
10.5
57.0
13.4
298
5.7
SM6T7V5A
KK7
AK7
7.13
7.88
10
6.40
500
11.3
53.0
14.5
276
6.1
SM6T10A
KT7
AT7
9.50
10.5
1.0
8.55
10.0
14.5
41.0
18.6
215
7.3
SM6T12A
KX7
AX7
11.4
12.6
1.0
10.2
5.0
16.7
36.0
21.7
184
7.8
SM6T15A
LG7
14.3
15.8
1.0
12.8
1.0
21.2
28.0
27.2
147
8.4
SM6T18A
LM7
BM7
17.1
18.9
1.0
15.3
1.0
25.2
24.0
32.5
123
8.8
SM6T22A
LT7
BT7
20.9
23.1
1.0
18.8
1.0
30.6
20.0
39.3
102
9.2
SM6T24A
LV7
22.8
25.2
1.0
20.5
1.0
33.2
18.0
42.8
93
9.4
SM6T27A
LX7
BX7
25.7
28.4
1.0
23.1
1.0
37.5
16.0
48.3
83
9.6
SM6T30A
ME7
CE7
28.5
31.5
1.0
25.6
1.0
41.5
14.5
53.5
75
9.7
SM6T33A
MG7
31.4
34.7
1.0
28.2
1.0
45.7
13.1
59.0
68
9.8
SM6T36A
MK7
CK7
34.2
37.8
1.0
30.8
1.0
49.9
12.0
64.3
62
9.9
SM6T39A
MM7
CM7
37.1
41.0
1.0
33.3
1.0
53.9
11.1
69.7
57
10.0
SM6T68A
NG7
64.6
71.4
1.0
58.1
1.0
92.0
6.50
121
33
10.4
SM6T100A
NV7
95.0
105
1.0
85.5
1.0
137
4.40
178
22.5
10.6
SM6T150A
PK7
143
158
1.0
128
1.0
207
2.90
265
15
10.8
SM6T200A
PR7
190
210
1.0
171
1.0
274
2.20
353
11.3
10.8
SM6T220A
PR8
209
231
1.0
188
1.0
328
2.00
388
10.3
10.8
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Thermal resistance, junction to ambient air (1)
RθJA
100
°C/W
Thermal resistance, junction to leads
RθJL
20
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SM6T10A-E3/52
0.096
52
750
7" diameter plastic tape and reel
SM6T10A-E3/5B
0.096
5B
3200
13" diameter plastic tape and reel
SM6T10AHE3/52 (1)
0.096
52
750
7" diameter plastic tape and reel
SM6T10AHE3/5B (1)
0.096
5B
3200
13" diameter plastic tape and reel
相关PDF资料
PDF描述
SM6T10A-E3 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
SM6T36CA 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
SM6T18A-E3 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
SM6T10A 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
SM6T220CA 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
相关代理商/技术参数
参数描述
SM6T6V8CA 制造商:STMicroelectronics 功能描述:DIODE TVS SMB 600W 6.8V
SM6T6V8CA/1 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 6.8V 5% Bidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
SM6T6V8CA/2 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 6.8V 5% Bi RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
SM6T6V8CA/5 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 6.8V 5% Bi RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
SM6T6V8CA/52 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 6.8V 5% Bi RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C