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参数资料
| 型号： | SM6T7V5AY |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 4000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封装： | ROHS COMPLIANT, PLASTIC, SMB, 2 PIN |
| 文件页数： | 5/11页 |
| 文件大小： | 150K |
| 代理商： | SM6T7V5AY |
SM6TY
Characteristics
Doc ID 17741 Rev 1
3/11
Table 3.
Electrical characteristics, typical values unless otherwise stated (Tamb = 25 °C)
Order code
IRM max@VRM
VBR @IR
(1)
VCL @IPP
10/1000 s
RD
(2)
10/1000 s
VCL @IPP
8/20 s
RD
8/20 s
αT
25 °C 85 °C
min. typ.
max.
A
V
mA
V(3)
A(4)
Ω
V(3)
Ω
10-4/ °C
SM6T7V5AY
20
50
6.4
7.13
7.5
10
11.3
53
0.065
14.5 276
0.024
6.1
SM6T18AY/CAY
0.2
1
15.3 17.1
18
1
25.2
24
0.263
32.5 123
0.111
8.8
SM6T22AY/CAY
0.2
1
18.8 20.9
22
1
30.6
20
0.375
39.3 102
0.159
9.2
SM6T24AY/CAY
0.2
1
20.5 22.8
24
1
33.2
18
0.444
42.8
93
0.189
9.4
SM6T27AY/CAY
0.2
1
23.1 25.7
27
1
37.5
16
0.569
48.3
83
0.240
9.6
SM6T30AY/CAY
0.2
1
25.6 28.5
30
1
41.5
14.5
0.690
53.5
75
0.293
9.7
SM6T33AY/CAY
0.2
1
28.2 31.4
33
1
45.7
13.1
0.840
59.0
68
0.357
9.8
SM6T36AY/CAY
0.2
1
30.8 34.2
36
1
49.9
12
1.01
64.3
62
0.427
9.9
SM6T39AY/CAY
0.2
1
33.3 37.1
39
1
53.9
11.1
1.16
69.7
57
0.504
10.0
SM6T42CAY
0.2
1
36
40
42.1
1
58.1
10.3
1.35
76
52
0.611
10.0
SM6T47AY/CAY
0.2
1
40
44.4 46.7
1
64.5
9.7
1.59
84
48
0.728
10.1
SM6T68AY/CAY
0.2
1
58.1 64.6
68
1
92
6.5
3.17
121
33
1.503
10.4
1.
Pulse test : tp < 50 ms
2.
To calculate maximum clamping voltage at another surge level, use the following formula:
VCLmax = VCL - RD x (IPP - IPPappli) where IPPappli is the surge current in the application.
3.
To calculate VBR or VCL versus junction temperature, use the following formulas:
VBR @ TJ = VBR @ 25°C x (1 + αT x (TJ - 25))
VCL @ TJ = VCL @ 25°C x (1 + αT x (TJ - 25))
4.
Surge capability given for both directions for unidirectional and bidirectional types.
Figure 3.
Peak power dissipation versus
initial junction temperature
(typical values)
Figure 4.
Peak pulse power versus
exponential pulse duration
0
100
200
300
400
500
600
700
10/1000 s
0
25
50
75
100
125
150
175
P
pp (W)
Tj(°C)
0.1
1.0
10.0
100.0
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
P
PP(kW)
T
j initial = 25 °C
tP(ms)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SM6T7V5CA | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 7.5V Bidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SM6T7V5CA | 制造商:STMicroelectronics 功能描述:DIODE TVS SMB 600W 7.5V |
| SM6T7V5CA/1 | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 7.5V 5% Bidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SM6T7V5CA/2 | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 7.5V 5% Bi RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SM6T7V5CA/5 | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 7.5V 5% Bidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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