参数资料
型号: SM8A27-E3/2D
厂商: Vishay General Semiconductor
文件页数: 3/5页
文件大小: 0K
描述: TVS 8W 27V UNIDIR DO-218AB
标准包装: 1
电压 - 反向隔离(标准值): 22V
电压 - 击穿: 24V
功率(瓦特): 6600W
电极标记: 单向
安装类型: 表面贴装
封装/外壳: DO-218AB
供应商设备封装: DO-218AB
包装: 标准包装
其它名称: SM8A27-E3/2DGIDKR
SM8A27
www.vishay.com
Vishay General Semiconductor
150
t r = 10 μs
T J = 25 °C
Pul s e Width (t d )
100
100
Peak Value
I PPM
I s defined a s the Point
where the Peak Current
decay s to 50 % of I PPM
10
1
T J = 175 °C
Half Value - I PP
0.1
I PPM
2
50
10/1000 μ s waveform
0.01
T J = 25 °C
a s defined by R.E.A
0.001
t d
0
0.0001
0
1.0
2.0
3.0
4.0
5
20
35
50
65
80
95
10 000
t - Time (m s )
Fig. 3 - Pulse Waveform
100
10
Percentage of V BR (%)
Fig. 6 - Typical Reverse Characteristics
R θ JA
1
0.1
R θ JC
1000
0.01
10
100
0.01
0.1
1
10
100
100
Pul s e Width (m s ) - ? I PP Exponential Waveform
Fig. 4 - Reverse Power Capability
?
?
?
t - Pul s e Width ( s )
Fig. 7 - Typical Transient Thermal Impedance
10
1.0
0.1
T J = 150 °C
T J = 25 °C
?
?
?
?
?
?
?
?
?
0.01
0.35
0.45
0.55
0.65
0.75
0.85
0.95
?
?
?
In s tantaneou s Forward Voltage (V)
Fig. 5 - Typical Instantaneous Forward Characteristics
?
Revision: 20-Jan-14
3
Document Number: 88386
For technical questions within your region: DiodesAmericas@vishay.com , DiodesAsia@vishay.com , DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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