参数资料
型号: SM8A27-E3/2D
厂商: VISHAY SEMICONDUCTORS
元件分类: TVS二极管 - 瞬态电压抑制
英文描述: 6600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-218AB
封装: PLASTIC PACKAGE-1
文件页数: 1/5页
文件大小: 139K
代理商: SM8A27-E3/2D
VISHAY
SM8A27
Document Number 88386
14-Sep-04
Vishay Semiconductors
www.vishay.com
1
formerly General Semiconductor
Surface Mount Automotive Transient Voltage Suppressor
Zener Voltage 27 V
Peak Pulse Current 130 A (10/10,000
s)
Peak Pulse Power 6600 W (10/1000
s)
Features
Ideally suited for load dump protection
High temperature stability due to unique oxide
passivation and patented PARconstruction
Integrally molded heatsink provides a very low
thermal resistance for maximum heat dissipation
Low leakage current at TJ = 175 °C
High temperature soldering guaranteed:
260 °C for 10 seconds at terminals
Meets ISO7637-2 surge spec.
Low forward voltage drop
Meets MSL level 1 per J-STD-020C
AEC-Q101qualified
Mechanical Data
Case: Molded plastic body, surface mount with heat-
sink integrally mounted in the encapsulation
Terminals:
Solder
plated
or
matte
tin
plated
(E3 Suffix) leads, Solderable per J-STD-002B and
Mil-STD-750, Method 2026
Polarity: Heatsink is anode
Mounting Position: Any
Weight: 0.091 oz., 2.58 g
Epoxy meets UL 94V-0 Flammability rating
Maximum Ratings and Thermal Characteristics
TC = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Steady state power dissipation
PD
8.0
W
Non-repetitive peak reverse
surge current
for 10
s/10 ms exponentially
decaying waveform
IRSM
130
A
Maximum working stand-off
voltage
VWM
22.0
V
Peak forward surge current
8.3 ms single half sine-wave
IFSM
700
A
Typical thermal resistance
junction to case
RθJC
0.90
°C/W
Operating junction and storage
temperature range
TJ, TSTG
-55 to +175
°C
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