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参数资料
| 型号： | SM8S33A2D |
| 厂商： | GENERAL SEMICONDUCTOR INC |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 5200 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-218AB |
| 文件页数： | 1/3页 |
| 文件大小： | 62K |
| 代理商： | SM8S33A2D |
Maximum Ratings and Thermal Characteristics (TC = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Peak pulse power dissipation with 10/1000
s waveform
6600
10/10,000
s waveform
PPPM
5200
W
Steady state power dissipation
PD
8.0
W
Peak pulse current with a 10/1000
s waveform(1)
IPPM
See Table 1
A
Peak forward surge current, 8.3ms single half sine-wave
IFSM
700
A
Typical thermal resistance junction to case
R
θJC
0.90
°C/W
Operating junction and storage temperature range
TJ, TSTG
-55 to +175
°C
Notes: (1) Non-repetitive current pulse derated above TA=25°C
0.093(2.4)
0.116(3.0)
0.059(1.5)
0.098(2.5)
0.138(3.5)
0.366(9.3)
0.343(8.7)
0.406(10.3)
0.382(9.7)
0.342(8.7)
0.327(8.3)
0.413(10.5)
0.374(9.5)
0.539(13.7)
0.524(13.3)
LEAD 2/METAL HEATSINK
0.020(0.5)
0.028(0.7)
0.016 (0.4) Min.
0.197(5.0)
0.185(4.7)
LEAD 1
0.628(16.0)
0.592(15.0)
New
Product
Patented*
*Patent #’s:
4,980,315
5,166,769
5,278,095
Features
Ideally suited for load dump protection
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
High temperature stability due to unique oxide passiva-
tion and patented PAR
construction
Integrally molded heatsink provides a very low thermal
resistance for maximum heat dissipation
Low leakage current at TJ = 175°C
High temperature soldering guaranteed:
260°C for 10 seconds at terminals
Meets ISO7637-2 surge spec.
Low forward voltage drop
SM8S Series
Surface Mount Automotive
Transient Voltage Suppressors
Stand-off Voltage 10 to 36V
Peak Pulse Power 6600W (10/1000
s)
5200W (10/10,000
s)
0.413(10.5)
0.374(9.5)
0.366(9.3)
0.343(8.7)
0.606(15.4)
0.583(14.8)
0.150(3.8)
0.126(3.2)
0.091(2.3)
0.067(1.7)
0.116(3.0)
0.093(2.4)
Mounting Pad Layout
8/28/01
Mechanical Data
Case: Molded plastic body, surface mount with heatsink
integrally mounted in the encapsulation
Terminals: Plated, solderable per MIL-STD-750, Method 2026
Polarity: Heatsink is anode
Mounting Position: Any
Weight: 0.091oz., 2.58g
Packaging codes/options:
2D/750 per 13” Reel (16mm Tape),
anode towards sprocket hole, 4.5K/box
2E/750 per 13” Reel (16mm Tape),
cathode towards sprocket hole, 4.5K/box
DO-218AB
Dimensions in
inches and (millimeters)
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| SM8S33A-E3/2D | 功能描述:TVS 二极管 - 瞬态电压抑制器 8W 33V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SM8S33A-E3/2E | 功能描述:TVS 二极管 - 瞬态电压抑制器 8.0W 33V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SM8S33AHE3/2D | 功能描述:TVS 二极管 - 瞬态电压抑制器 8.0W 33V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SM8S33AHE3/2E | 功能描述:TVS 二极管 - 瞬态电压抑制器 8.0W 33V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SM8S33-E3/2D | 功能描述:TVS 二极管 - 瞬态电压抑制器 8W 33V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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