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参数资料
| 型号： | SMA5J8.0CA-HE3/5A |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC |
| 封装： | ROHS COMPLIANT, PLASTIC, SMA, 2 PIN |
| 文件页数： | 4/6页 |
| 文件大小： | 91K |
| 代理商： | SMA5J8.0CA-HE3/5A |
SMA5J5.0 thru SMA5J40CA
Vishay General Semiconductor
www.vishay.com
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88875
Revision: 22-Oct-08
4
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Figure 1. Peak Pulse Power Rating Curve
Figure 2. Pulse Power or Current vs. Initial Junction Temperature
Figure 3. Pulse Waveform
0.1
1
10
100
Non-Repetitive Pulse
Waveform shown in Fig. 3
T
A = 25 °C
P
PPM
-
P
eak
P
u
lse
P
o
w
er
(k
W
)
td - Pulse Width (s)
0.1 s
1.0 s
10 s
100 s
1.0 ms
10 ms
0
255075
100
75
50
25
0
125
150
175
200
TJ - Initial Temperature (°C)
Pe
a
k
P
u
lse
P
o
w
er
(P
PP
)or
C
u
rrent
(I
PP
)
Der
ating
in
P
e
rcentage
,%
0
50
100
150
t
d
0
1.0
2.0
3.0
4.0
I PPM
-
P
e
ak
P
u
lse
C
u
rrent,
%
I
RSM
t - Time (ms)
t
r = 10 s
Peak Value
I
PPM
Half Value -
I
PPM
I
PP
2
10/1000 s Waveform
as defined by R.E.A.
T
J = 25 °C
Pulse Width (t
d)
is defined as the Point
where the Peak Current
decays to 50 % of I
PPM
Figure 4. Typical Junction Capacitance
Figure 5. Typical Transient Thermal Impedance
Figure 6. Maximum Non-Repetitive Forward Surge Current
Uni-Directional Only
Uni-Directional
Bi-Directional
10
100
1000
10 000
10
1
100
200
Measured at
Zero Bias
Measured at Stand-Off
Voltage V
WM
T
J = 25 °C
f = 1.0 MHz
C
J-
J
u
nction
Capacitance
(pF)
VWM - Reverse Stand-Off Voltage (V)
1
10
100
0.01
0.1
10
1
100
1000
tp - Pulse Duration (s)
T
ransient
Ther
mal
Impedance
(°C/
W
)
50
10
5
1
100
10
50
100
200
T
J = TJ max.
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Pe
a
k
F
o
rw
ard
S
u
rge
C
u
rrent
(A)
相关PDF资料 |
PDF描述 |
|---|---|
| SMA5J8.5-HE3/5A | 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC |
| SMA5J8.5A-E3/5A | 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC |
| SMA5J8.5C-E3/5A | 500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC |
| SMA5J8.5C-HE3/5A | 500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC |
| SMA5J8.5CA-E3/5A | 500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SMA5J9.0A | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:High Power Density Surface Mount TRANSZORB? |
| SMA5J9.0A-E3/2G | 功能描述:TVS 二极管 - 瞬态电压抑制器 500W 9.0V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMA5J9.0A-E3/51 | 功能描述:TVS 二极管 - 瞬态电压抑制器 500W 9.0V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMA5J9.0A-E3/5A | 功能描述:TVS 二极管 - 瞬态电压抑制器 500W 9.0V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMA5J9.0A-E3/61 | 功能描述:TVS 二极管 - 瞬态电压抑制器 500W 9.0V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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