参数资料
型号: SMA5J9.0-E3
厂商: VISHAY SEMICONDUCTORS
元件分类: TVS二极管 - 瞬态电压抑制
英文描述: 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
封装: PLASTIC, SMA, 2 PIN
文件页数: 1/6页
文件大小: 106K
代理商: SMA5J9.0-E3
SMA5J5.0 thru SMA5J40CA
Vishay General Semiconductor
www.vishay.com
Document Number: 88875
Revision: 08-May-07
66
High Power Density Surface Mount TRANSZORB
Transient Voltage Suppressors
FEATURES
Low profile package
Ideal for automated placement
Glass passivated chip junction
Available in uni-directional and bi-directional
Excellent clamping capability
Very fast response time
Low incremental surge resistance
Meets MSL level 1, per J-STD-020C, LF max peak
of 260 °C
Solder dip 260 °C, 40 seconds
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
MECHANICAL DATA
Case: DO-214AC (SMA)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: For uni-directional types the band denotes
cathode end, no marking on bi-directional types
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional devices use C or CA suffix
(e.g. SMA5J40CA).
Electrical characteristics apply in both directions.
PRIMARY CHARACTERISTICS
VWM
5.0 V to 40 V
PPPM
500 W
IFSM (uni-directional only)
40 A
TJ max.
150 °C
DO-214AC (SMA)
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2.
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Peak pulse power dissipation with a 10/1000 s waveform (1)(2) (Fig. 1)
PPPM
500
W
Peak pulse current with a 10/1000 s waveform (1)
IPPM
See next table
A
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)
IFSM
40
A
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
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