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参数资料
| 型号： | SMA6F17A-M3/6B |
| 厂商： | Vishay General Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | TVS DIODE 17V 1CH UNI DO-221AC |
| 标准包装： | 14,000 |
| 系列： | TransZorb® |
| 电压 - 反向隔离（标准值）： | 17V |
| 电压 - 击穿： | 18.9V |
| 功率（瓦特）： | 600W |
| 电极标记： | 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | DO-221AC，SMA 扁平引线 |
| 供应商设备封装： | DO-221AC |
| 包装： | 带卷 (TR) |
SMA6F5.0A thru SMA6F20A
www.vishay.com
INDEX OF SYMBOLS
Vishay General Semiconductor
SYMBOL
V WM
V BR
V C
PARAMETER
Stand-off voltage
Breakdown voltage
Clamping voltage
V WM
V BR
V C
I F
I D
I PP
? T
Leakage current at V WM
Peak pulse current
Voltage temperature coefficient
I D
I T
V F
V
V F
Forward voltage drop
R D
Dynamic resistance
I PP
Zener Voltage Regulator
ELECTRICAL CHARACTERISTICS (T A = 25 °C unless otherwise noted)
DEVICE ?
TYPE
DEVICE
MARKING
CODE
BREAKDOWN
VOLTAGE
V BR AT I T (1)
MIN. MAX.
STAND-OFF
VOLTAGE
V WM
MAXIMUM
REVERSE
LEAKAGE
I D AT V WM (3)
25 °C 85 °C
V C AT I PP R D (2)
10/1000 μs
MAX.
V C AT I PP
8/20 μs
MAX.
R D (2)
? T (3)
MAX.
V
mA
V
μA
V
V
A
?
V
A
?
10 -4 /°C
SMA6F5.0A
SMA6F6.0A
SMA6F6.5A
SMA6F7.5A
SMA6F8.0A
SMA6F8.5A
SMA6F10A
SMA6F11A
SMA6F12A
SMA6F12AHD
SMA6F13A
SMA6F15A
SMA6F16A
SMA6F17A
SMA6F18A
SMA6F20A
6AE
6AG
6AK
6AP
6AR
6AT
6AX
6AZ
6BE
6BF
6BG
6BM
6BP
6BR
6BT
6BV
6.40
6.70
7.20
8.33
8.89
9.4
11.1
12.2
13.3
13.2
14.4
16.7
17.8
18.9
20.0
22.2
7.07
7.41
7.96
9.21
9.83
10.4
12.3
13.5
14.7
14.3
15.9
18.5
19.7
20.9
22.1
24.5
10
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
5
6
6.5
7.5
8.0
8.5
10
11
12
12
13
15
16
17
18
20
150
600
100
50
20
20
1.0
1.0
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
375
1500
250
125
50
50
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
5.0
6.0
6.5
7.5
8.0
8.5
10
11
12
12
13
15
16
17
18
20
9.2
9.5
10.2
11.8
12.8
13.3
15.7
17.2
18.8
18.5
20.4
23.6
25.2
26.7
28.3
31.4
68.0
63.2
58.8
50.8
46.9
45.1
38.2
34.8
31.9
32.4
29.4
25.4
23.8
22.5
21.2
19.1
0.031
0.033
0.038
0.051
0.063
0.064
0.089
0.107
0.128
0.130
0.153
0.201
0.229
0.259
0.292
0.361
13.4
13.7
14.5
17.0
18.2
18.7
19.6
21.5
23.5
22.9
23.9
27.7
29.5
31.4
33.2
36.8
298
290
276
235
220
205
184
172
157
157
147
123
119
111
102
93
0.021
0.022
0.024
0.033
0.038
0.040
0.040
0.047
0.056
0.055
0.064
0.075
0.082
0.095
0.109
0.132
5.7
5.9
6.1
6.5
7.0
7.3
7.8
8.1
8.3
8.4
8.4
8.8
8.8
9.0
9.2
9.4
Notes
(1) Pulse test: t p ? 50 ms
(2) To calculate maximum clamping voltage at other surge currents, use following formula: V CL max. = R D x I PP + V BR max.
(3) To calculate V BR vs. junction temperature, use following formula: V BR at T J = V BR at 25 °C x (1 + ? T x (T J - 25))
THERMAL CHARACTERISTICS (T A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Typical thermal resistance, junction to ambient
R ? JA
(1)
150
°C/W
Typical thermal resistance, junction to mount
R ? JM(2)
20
°C/W
Notes
(1) Mounted on minimum recommended pad layout
(2) Mounted on infinite heatsink
Revision: 10-Dec-13
2
Document Number: 89458
For technical questions within your region: DiodesAmericas@vishay.com , DiodesAsia@vishay.com , DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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