参数资料
型号: SMA6F8.0A-M3/6A
厂商: Vishay General Semiconductor
文件页数: 1/5页
文件大小: 0K
描述: TVS DIODE 8V 1CH UNI DO-221AC
标准包装: 3,500
系列: TransZorb®
电压 - 反向隔离(标准值): 8V
电压 - 击穿: 8.89V
功率(瓦特): 600W
电极标记: 单向
安装类型: 表面贴装
封装/外壳: DO-221AC,SMA 扁平引线
供应商设备封装: DO-221AC
包装: 带卷 (TR)
SMA6F5.0A thru SMA6F20A
www.vishay.com
Vishay General Semiconductor
Surface Mount T RANS Z ORB? Transient Voltage Suppressors
FEATURES
SlimSMA
TM
? Very low profile - typical height of 0.95 mm
? Ideal for automated placement
? Uni-directional only
? Excellent clamping capability
? Peak pulse power: ?
- 600 W (10/1000 μs) ?
Top View
Bottom View
DO-221AC
- 4 kW (8/20 μs)
? ESD capability: IEC 61000-4-2 level 4 ?
- 15 kV (air) ?
- 8 kV (contact)
? Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
PRIMARY CHARACTERISTICS
? Material categorization: For definitions of compliance
V BR
V WM
P PPM (10 x 1000 μs)
P PPM (8 x 20 μs)
P D at T M = 55 °C
T J max.
6.4 V to 24.5 V
5.0 V to 20 V
600 W
4000 W
6W
175 °C
please see www.vishay.com/doc?99912
MECHANICAL DATA
Case: DO-221AC (SlimSMA) ?
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Polarity
Uni-directional
Terminals:
Matte tin plated leads, solderable
per
Package
DO-221AC (SlimSMA)
J-STD-002 and JESD22-B102 ?
M3 suffix meets JESD 201 class 2 whisker test
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
Polarity: Color band denotes cathode end
?
?
?
?
MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Peak pulse power dissipation
Peak pulse current
Power dissipation
Storage temperature range
Operating junction temperature range
with a 10/1000 μs waveform
with a 8/20 μs waveform
with a 10/1000 μs waveform
with a 8/20 μs waveform
T M = 55 °C
T A = 25 °C
P PPM (1)
I PPM (1)
P D (2)
P D (3)
T STG
T J
600
4000
See next table
6
1.0
-65 to +175
-55 to +175
W
A
W
°C
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above T A = 25 °C per fig. 2.
(2) Power dissipation mounted on infinite heatsink
(3) Power dissipation mounted on minimum recommended pad layout
Revision: 10-Dec-13
1
Document Number: 89458
For technical questions within your region: DiodesAmericas@vishay.com , DiodesAsia@vishay.com , DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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