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参数资料
| 型号： | SMAJ100C-TP |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC |
| 封装： | ROHS COMPLIANT, PLASTIC, SMA, 2 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 237K |
| 代理商： | SMAJ100C-TP |
MCC
100
10
1.0
0.1
MOUNTED ON5.0mm 2
COPPER LAND AREAS
NON-REPETITIVE
PULSE WAVEFORM
SHOWNINFIGURE 3
TA = 25
td, PULSE WIDTH, SEC
100
75
50
25
0
25
50
75
100
125
150
175
200
TA, AMBIENT TEMPERATURE,
Fig. 1-PEAK PULSE POWER RATING CURVE
Fig. 2-PULSE RATING CURVE
150
100
50
0
1.0
2.0
3.0
4.0
TA = 25
Pulse Width(td) is Defined as the
Point Where the Peak Current
Decays to 50% of lpp
PeakValueIppm
Half Value- Ipp
2
10/1000
sec Waveform
as Defined by R.E.A.
e-kt
td
tf = 10
sec
t, TIME , ms
10,000
40,000
20,000
1,000
6,000
4,000
2,000
100
500
200
10
1.0
2.0
5.0
10
20
50
100 200
MEASUREDAT
STAND-OFF
VOLTAGE(VMW)
TJ = 25
f= 1.0MHz
Vsig = 50mVp-p
MEASURED AT
ZERO BIAS
V(BR),BREAKDOWN VOLTAGE, VOLTS
Fig. 3-PULSE WAVEFORM
Fig. 4-TYPICAL JUNCTION CAPACITANCE
50
40
30
20
10
14
10 20
40
100
0
T
J =TJ max
8.3mss SINGLE HALF
SINCE-WAVE JEDEC
METHOD
NUMBER OF CYCLES AT 60Hz
Fig. 5-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
PEAK
PUL
SE
P
OWER(P
pp)
OR
CU
RREN
T(Ip
p)
D
ERA
TING
IN
PE
RCEN
T
AG
E
%
Ipp
m,
P
EAK
PULS
E
CU
RREN
T
,%
Ifsm,
PEAK
FO
RWAR
D
SU
RGE
CUR
RENT
,AM
PER
ES
P
PP
M
,PEA
K
PU
LSE
POWER,
KW
CJ,
CAP
ACIT
ANC
E,
p
F
SMAJ5.0 thru SMAJ
440CA
Revision: A
2011/01/01
TM
Micro Commercial Components
°C
www.mccsemi.com
2 of 4
0.1us
1.0 us
10 us
100 us
1.0ms
10ms
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SMAJ100-E3/1 | 功能描述:TVS 二极管 - 瞬态电压抑制器 400W 100V 10% Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMAJ100-E3/51 | 功能描述:TVS 二极管 - 瞬态电压抑制器 400W 100V 10% Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMAJ100-E3/5A | 功能描述:TVS 二极管 - 瞬态电压抑制器 400W 100V 10% Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMAJ100-E3/61 | 功能描述:TVS 二极管 - 瞬态电压抑制器 400W 100V 5% Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMAJ100E3/TR13 | 制造商:Microsemi Corporation 功能描述:400W, STAND-OFF VOLTAGE = 100V, ? 10%, UNI-DIR - Tape and Reel 制造商:Microsemi Corporation 功能描述:TVS DIODE 100VWM 179VC SMAJ |
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