参数资料
型号: SMAJ110C
厂商: LITE-ON SEMICONDUCTOR CORP
元件分类: TVS二极管 - 瞬态电压抑制
英文描述: 400 W, BIDIRECTIONAL, SILICON, TVS DIODE
封装: PLASTIC, SMA, 2 PIN
文件页数: 2/4页
文件大小: 0K
代理商: SMAJ110C
RATING AND CHARACTERISTIC CURVES
SMAJ SERIES
FIG.1 - PULSE DERATING CURVE
PEAK
PUL
SE
DERA
T
ING
I
N
%
O
F
PEAK
P
O
W
E
R
O
R
C
U
R
E
N
T
25
75
100
125
150
0
50
100
0
175
75
25
200
10 X 1000 WAVEFORM AS
DEFINED BY R.E.A.
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
NUMBER OF CYCLES AT 60Hz
PE
AK
F
O
R
W
A
R
D
S
U
R
G
E
CU
RR
EN
T
,
AM
PERES
1
5
10
50
100
2
20
0
10
Pulse Width 8.3ms
Single Half-Sine-Wave
(JEDEC METHOD)
20
30
40
50
60
PM
(A
V
),
STEAD
Y
S
T
A
T
E
PO
W
E
R
D
IS
S
IP
A
T
IO
N
(
W
)
FIG.6 - STEADY STATE POWER DERATING CURVE
TL, LEAD TEMPERATURE
25
75
100
125
150
0.0
50
0
175
200
0.2
0.4
0.6
0.8
1.0
60Hz RESISTIVE OR
INDUCTIVE LOAD
FIG.4 - TYPICAL JUNCTION CAPACITANCE
C
APACI
T
ANCE
,
(p
F
)
STAND-OFF VOLTAGE, VOLTS
10
1
100
10000
1000
100
10
1000
Uni-directional
Bi-directional
TJ = 25 C
AMBIENT TEMPERATURE, C
FIG.5 - PULSE RATING CURVE
P
,PE
AK
P
O
W
E
R
(
K
W
)
TP, PULSE WIDTH
0.1
1.0
10
0.1us
1.0us
10us
100us
1.0ms
10ms
100
TA=25 C
5.0mm LEAD AREAS
NON-REPETITIVE
PULSE WAVEFORM
SHOWN IN FIG 3.
REV. 4, 12-Jan-2004, KSIA02
FIG.3 - PULSE WAVEFORM
0
IP,
PEAK
PUL
S
E
CURRENT
,
(
%
)
T , TIME ( ms )
50
100
1.0
2.0
3.0
4.0
TR=10us
Peak value (IRSM)
TP
10 x 1000 waveform as
defined by R.E.A.
Pulse width (TP) is defined
as that point where the
peak current decays to
50% of IRSM
TJ=25 C
IRSM
2
Half value=
相关PDF资料
PDF描述
SMAJ130 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE
SMAJ20C 400 W, BIDIRECTIONAL, SILICON, TVS DIODE
SMAJ8.5C 400 W, BIDIRECTIONAL, SILICON, TVS DIODE
SMAJ6.0C 400 W, BIDIRECTIONAL, SILICON, TVS DIODE
SMAJ90C 400 W, BIDIRECTIONAL, SILICON, TVS DIODE
相关代理商/技术参数
参数描述
SMAJ110CA 功能描述:TVS 二极管 - 瞬态电压抑制器 110volts 5uA 2.3 Amps Bi-Dir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
SMAJ110CA R2 制造商:SKMI/Taiwan 功能描述:Diode TVS Single Bi-Dir 110V 400W 2-Pin SMA T/R
SMAJ110CA/1 功能描述:TVS 二极管 - 瞬态电压抑制器 400W 110V 5% Bi RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
SMAJ110CA/11 功能描述:TVS 二极管 - 瞬态电压抑制器 400W 110V 5% Bi RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
SMAJ110CA/2F 功能描述:TVS 二极管 - 瞬态电压抑制器 400W 110V 5% Bi RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C