参数资料
型号: SMAJ13A-E3/61
厂商: Vishay General Semiconductor
文件页数: 1/5页
文件大小: 0K
描述: TVS UNIDIR 400W 13V 5% SMA
标准包装: 1
系列: TransZorb®
电压 - 反向隔离(标准值): 13V
电压 - 击穿: 14.4V
功率(瓦特): 400W
电极标记: 单向
安装类型: 表面贴装
封装/外壳: DO-214AC,SMA
供应商设备封装: DO-214AC(SMA)
包装: 标准包装
其它名称: SMAJ13A-E3/61GIDKR
SMAJ5.0A thru SMAJ188CA
www.vishay.com
Vishay General Semiconductor
Surface Mount T RANS Z ORB?
Transient Voltage Suppressors
FEATURES
? Low profile package
? Ideal for automated placement
? Glass passivated chip junction
? Available in uni-directional and bi-directional
? 400 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate (duty cycle):
0.01 % (300 W above 78 V)
? Excellent clamping capability
DO-214AC ( S MA)
PRIMARY CHARACTERISTICS
? Very fast response time
? Low incremental surge resistance
? Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
? AEC-Q101 qualified
? Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
V WM
5.0 V to 188 V
P PPM
I FSM
T J max.
400 W, 300 W
40 A
150 °C
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive, and telecommunication.
MECHANICAL DATA
Case: DO-214AC (SMA)
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional use CA suffix (e.g. SMAJ10CA).
Electrical characteristics apply in both directions.
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable
per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: For uni-directional types the band denotes
cathode end, no marking on bi-directional types
MAXIMUM RATINGS (T A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Peak pulse power dissipation with a 10/1000 μs waveform
(1)
Peak pulse current with a waveform
(1)(2) (fig.
1)
P PPM
I PPM
400
See next table
W
A
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)
Operating junction and storage temperature range
I FSM
T J , T STG
40
- 55 to + 150
A
°C
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above T
A = 25 °C per fig. 2. Rating is 300 W above 78 V
(2) Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
Revision: 26-Jan-12
1
Document Number: 88390
For technical questions within your region: DiodesAmericas@vishay.com , DiodesAsia@vishay.com , DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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