参数资料
型号: SMAJ18CAE3/TR13
厂商: MICROSEMI CORP
元件分类: TVS二极管 - 瞬态电压抑制
英文描述: 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
封装: ROHS COMPLIANT, PLASTIC, SMA, 2 PIN
文件页数: 3/6页
文件大小: 484K
代理商: SMAJ18CAE3/TR13
400W Transient Voltage Suppressor (TVS) protection device
www.Microsemi.com
3/6
Copyright
2010
Mar Rev C
SMAJ5.0e3 to SMAJ440CAe3
Electrical characteristics (cont.)
(1)
Device
marking code
BREAKDOWN
VOLTAGE
(2), VBR
VBR (V) @ IT (mA)
DEVICE
UNI
BI
Min
Max
TEST
CURRENT IT
(mA)
STAND-OFF
VOLTAGE VWM
(V)
MAXIMUM
STANDBY
CURRENT
(4) ID
(A) @ VWM
MAXIMUM PEAK
PULSE
CURRENT
(3) IPP
(A)
MAXIMUM
CLAMPING
VOLTAGE VC (V)
@ IPP
SMAJ24e3 / SMAJ24Ce3
MBY
MXY
26.7
32.6
1.0
24
1.0
9.3
43.0
SMAJ24Ae3 / SMAJ24CAe3
MBZ
MXZ
26.7
29.5
1.0
24
1.0
10.3
38.9
SMAJ26e3 / SMAJ26Ce3
MCD
MYD
28.9
35.3
1.0
26
1.0
8.6
46.6
SMAJ26Ae3 / SMAJ26CAe3
MCE
MYE
28.9
31.9
1.0
26
1.0
9.5
42.1
SMAJ28e3 / SMAJ28Ce3
MCF
MYF
31.1
38.0
1.0
28
1.0
8.0
50.0
SMAJ28Ae3 / SMAJ28CAe3
MCG
MYG
31.1
34.4
1.0
28
1.0
8.8
45.4
SMAJ30e3 / SMAJ30Ce3
MCH
MYH
33.3
40.7
1.0
30
1.0
7.5
53.5
SMAJ30Ae3 / SMAJ30CAe3
MCK
MYK
33.3
36.8
1.0
30
1.0
8.3
48.4
SMAJ33e3 / SMAJ33Ce3
MCL
MYL
36.7
44.9
1.0
33
1.0
6.8
59.0
SMAJ33Ae3 / SMAJ33CAe3
MCM
MYM
36.7
40.6
1.0
33
1.0
7.5
53.3
SMAJ36e3 / SMAJ36Ce3
MCN
MYN
40.0
48.9
1.0
36
1.0
6.2
64.3
SMAJ36Ae3 / SMAJ36CAe3
MCP
MYP
40.0
44.2
1.0
36
1.0
6.9
58.1
SMAJ40e3 / SMAJ40Ce3
MCQ
MYQ
44.4
54.3
1.0
40
1.0
5.6
71.4
SMAJ40Ae3 / SMAJ40CAe3
MCR
MYR
44.4
49.1
1.0
40
1.0
6.2
64.5
SMAJ43e3 / SMAJ43Ce3
MCS
MYS
47.8
58.4
1.0
43
1.0
5.2
76.7
SMAJ43Ae3 / SMAJ43CAe3
MCT
MYT
47.8
52.8
1.0
43
1.0
5.8
69.4
SMAJ45e3 / SMAJ45Ce3
MCU
MYU
50.0
61.1
1.0
45
1.0
5.0
80.3
SMAJ45Ae3 / SMAJ45CAe3
MCV
MYV
50.0
55.3
1.0
45
1.0
5.5
72.7
SMAJ48e3 / SMAJ48Ce3
MCW
MYW
53.3
65.1
1.0
48
1.0
4.7
85.5
SMAJ48Ae3 / SMAJ48CAe3
MCX
MYX
53.3
58.9
1.0
48
1.0
5.2
77.4
SMAJ51e3 / SMAJ51Ce3
MCY
MYY
56.7
69.3
1.0
51
1.0
4.4
91.1
SMAJ51Ae3 / SMAJ51CAe3
MCZ
MYZ
56.7
62.7
1.0
51
1.0
4.9
82.4
SMAJ54e3 / SMAJ54Ce3
MRD
MZD
60.0
73.3
1.0
54
1.0
4.2
96.3
SMAJ54Ae3 / SMAJ54CAe3
MRE
MZE
60.0
66.3
1.0
54
1.0
4.6
87.1
SMAJ58e3 / SMAJ58Ce3
MRF
MZF
64.4
78.7
1.0
58
1.0
3.9
103
SMAJ58Ae3 / SMAJ58CAe3
MRG
MZG
64.4
71.2
1.0
58
1.0
4.3
93.6
SMAJ60e3 / SMAJ60Ce3
MRH
MZH
66.7
81.5
1.0
60
1.0
3.7
107
SMAJ60Ae3 / SMAJ60CAe3
MRK
MZK
66.7
73.7
1.0
60
1.0
4.1
96.8
SMAJ64e3 / SMAJ64Ce3
MRL
MZL
71.1
86.9
1.0
64
1.0
3.5
114
SMAJ64Ae3 / SMAJ64CAe3
MRM
MZM
71.1
78.6
1.0
64
1.0
3.9
103
SMAJ70e3 / SMAJ70Ce3
MRN
MZN
77.8
95.1
1.0
70
1.0
3.2
125
SMAJ70Ae3 / SMAJ70CAe3
MRP
MZP
77.8
86.0
1.0
70
1.0
3.5
113
SMAJ75e3 / SMAJ75Ce3
MRQ
MZQ
83.3
102
1.0
75
1.0
3.0
134
SMAJ75Ae3 / SMAJ75CAe3
MRR
MZR
83.3
92.1
1.0
75
1.0
3.3
121
SMAJ78e3 / SMAJ78Ce3
MRS
MZS
86.7
106
1.0
78
1.0
2.9
139
SMAJ78Ae3 / SMAJ78CAe3
MRT
MZT
86.7
95.8
1.0
78
1.0
3.2
126
SMAJ85e3 / SMAJ85Ce3
MRU
MZU
94.4
115
1.0
85
1.0
2.0
151
SMAJ85Ae3 / SMAJ85CAe3
MRV
MZV
94.4
104
1.0
85
1.0
2.2
137
(1) All ratings at 25C unless specified otherwise
(2) VBR measured after IT applied for 300s, IT=square wave pulse or equivalent
(3) Surge current waveform per Fig.3 and derated per Fig.2
(4) For bidrectional types with VWM of 10 volts and less, the ID limit is doubled
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