- 您现在的位置：买卖IC网 > PDF目录40215 > SMAJ26CA-TR (STMICROELECTRONICS) 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC PDF资料下载
参数资料
| 型号： | SMAJ26CA-TR |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC |
| 封装： | LEAD FREE, SMA, 2 PIN |
| 文件页数： | 3/10页 |
| 文件大小： | 142K |
| 代理商： | SMAJ26CA-TR |
Characteristics
SMAJ
2/10
Doc ID 5544 Rev 12
1
Characteristics
Figure 1.
Electrical characteristics - definitions
Figure 2.
Pulse definition for electrical characteristics
Table 1.
Absolute maximum ratings (Tamb = 25 °C)
Symbol
Parameter
Value
Unit
PPP
Peak pulse power dissipation (1)
Tj initial = Tamb
400
W
Tstg
Storage temperature range
-65 to +150
°C
Tj
Operating junction temperature range
-55 to +150
°C
TL
Maximum lead temperature for soldering during 10 s.
260
°C
1.
For a surge greater than the maximum values, the diode will fail in short-circuit.
Table 2.
Thermal resistances
Symbol
Parameter
Value
Unit
Rth(j-l)
Junction to leads
30
°C/W
Rth(j-a)
Junction to ambient on printed circuit on recommended pad layout
120
°C/W
V
CLVBR VRM
I
RM
I
R
I
PP
V
I
RM
I
R
I
PP
V
RMVBR VCL
V
CLVBR VRM
I
RM
I
R
I
PP
V
I
RM
I
R
I
PP
V
RMVBR VCL
V
CL VBR VRM
I
RM
I
R
I
PP
V
I
F
V
F
V
CL VBR VRM
I
RM
I
R
I
PP
V
I
F
V
F
Unidirectional
Bidirectional
Symbol Parameter
V
Stand-off voltage
V
Breakdown voltage
V
Clamping voltage
I
Leakage current @ V
I
Peak pulse current
T
Voltage temperature coefficient
V
Forward voltage drop
R
Dynamic resistance
RM
BR
CL
RM
PP
F
D
α
Repetitive pulse current
tr = rise time (s)
tp = pulse duration time (s)
tr
tp
相关PDF资料 |
PDF描述 |
|---|---|
| SMAJ154A-TR | 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC |
| SMAJ15A-TR | 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC |
| SMAJ30CA-TR | 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC |
| SMAJ8.5A-TR | 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC |
| SMAJ130A-TR | 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SMAJ26C-E3/5A | 功能描述:TVS 二极管 - 瞬态电压抑制器 400W 26V 10% Bi RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMAJ26C-E3/61 | 功能描述:TVS 二极管 - 瞬态电压抑制器 400W 26V 10% Bi RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMAJ26CE3/TR13 | 制造商:Microsemi Corporation 功能描述:400W, STAND-OFF VOLTAGE = 26V, ? 10%, BI-DIR - Tape and Reel 制造商:Microsemi Corporation 功能描述:TVS DIODE 26VWM 46.6VC SMAJ |
| SMAJ26CHE3/5A | 功能描述:TVS 二极管 - 瞬态电压抑制器 400W 26V 10% Bi RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMAJ26CHE3/61 | 功能描述:TVS 二极管 - 瞬态电压抑制器 400W 26V 10% Bi RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
发布紧急采购，3分钟左右您将得到回复。