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参数资料
| 型号： | SMAJ33A |
| 厂商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 封装： | PLASTIC, SMA, 2 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 125K |
| 代理商： | SMAJ33A |
RATING AND CHARACTERISTIC CURVES
SMAJ SERIES
FIG.1 - PULSE DERATING CURVE
P
E
A
K
P
U
L
S
E
D
E
R
A
T
IN
G
IN
%
O
F
P
E
A
K
P
O
W
E
R
O
R
C
U
R
E
N
T
25
75
100
125
150
0
50
100
0
175
75
25
200
10 X 1000 WAVEFORM AS
DEFINED BY R.E.A.
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
NUMBER OF CYCLES AT 60Hz
P
E
A
K
F
O
R
W
A
R
D
S
U
R
G
E
C
U
R
E
N
T
,
A
M
P
E
R
E
S
1
5
10
50
100
2
20
0
10
Pulse Width 8.3ms
Single Half-Sine-Wave
20
30
40
50
60
P
M
(A
V
),
S
T
E
A
D
Y
S
T
A
T
E
P
O
W
E
R
D
IS
S
IP
A
T
IO
N
(W
)
FIG.6 - STEADY STATE POWER DERATING CURVE
TL, LEAD TEMPERATURE,
℃
25
75
100
125
150
0.0
50
0
175
200
0.2
0.4
0.6
0.8
1.0
60Hz RESISTIVE OR
INDUCTIVE LOAD
FIG.4 - TYPICAL JUNCTION CAPACITANCE
C
A
P
A
C
IT
A
N
C
E
,
(p
F
)
STAND-OFF VOLTAGE, VOLTS
10
1
100
10000
1000
100
10
1000
Uni-directional
Bi-directional
TJ = 25 C
AMBIENT TEMPERATURE, ℃
FIG.5 - PULSE RATING CURVE
P
,
P
E
A
K
P
O
W
E
R
(
K
W
)
TP, PULSE WIDTH
0.1
1.0
10
0.1us
1.0us
10us
100us
1.0ms
10ms
100
TA=25 C
5.0mm LEAD AREAS
NON-REPETITIVE
PULSE WAVEFORM
SHOWN IN FIG 3.
FIG.3 - PULSE WAVEFORM
0
IP
,
P
E
A
K
P
U
L
S
E
C
U
R
E
N
T
,
(%
)
T , TIME ( ms )
50
100
1.0
2.0
3.0
4.0
TR=10us
Peak value (IRSM)
TP
10 x 1000 waveform as
defined by R.E.A.
Pulse width (TP) is defined
as that point where the
peak current decays to
50% of IRSM
TJ=25 C
IRSM
2
Half value=
Measured at
F= 1MHz,
1.0Vrms signal
Bias=0Vdc
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SMAJ33A | 制造商:Bourns Inc 功能描述:Diode 制造商:Littelfuse 功能描述:TVS DIODE 400W 33V DO-214AC 制造商:STMicroelectronics 功能描述:DIODE TVS SMA 400W 33V |
| SMAJ33A/1 | 功能描述:TVS 二极管 - 瞬态电压抑制器 400W 33V 5% Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMAJ33A/11 | 功能描述:TVS 二极管 - 瞬态电压抑制器 400W 33V 5% Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMAJ33A/11 | 制造商:Vishay Semiconductors 功能描述:DIODE TVS SMA 400W 33V |
| SMAJ33A/13 | 功能描述:TVS 二极管 - 瞬态电压抑制器 400W 33V 5% Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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