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参数资料
| 型号： | SMAJ530/61 |
| 厂商： | GENERAL SEMICONDUCTOR INC |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC |
| 封装： | PLASTIC, SMA, 2 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 25K |
| 代理商： | SMAJ530/61 |
SMAJ530 and SMAJ550
Vishay Semiconductor
Document Number #####
www.vishay.com
14-Dec-01
1
New Product
Surface Mount TRANSZORB
Transient Voltage Suppressors
Maximum Ratings and Thermal Characteristics TA = 25OC unless otherwise noted.
Parameter
Symbol
SMAJ530
SMAJ550
Unit
Device marking code
HD
SB
Steady state power dissipation(3)
PM(AV)
1.0
W
Peak pulse power dissipation(1)(2)(5) (Fig. 1)
PPPM
Minimum 300
W
Stand-off voltage
VWM
477
495
V
Typical thermal resistance junction-to-lead
R
θJL
27
°C/W
Typical thermal resistance junction-to-ambient
R
θJA
75
°C/W
Operating junction and storage temperature range
TJ, TSTG
–55 to +150
°C
Electrical Characteristics TA = 25OC unless otherwise noted.
Minimum breakdown voltage at 100
AV(BR)
530
550
V
Max. clamping voltage at 400mA, 10/1000
s-waveform
Vc
660
V
Maximum DC reverse leakage current at VWM
ID
5.0
A
Typical temperature coefficient of V(BR)
650
mV°C
Typical capacitance(4)
at 0V
CJ
90
pF
at 200V
7.5
Notes: (1) Non repetitive current pulse per Fig.3 and derated above 25OC per Fig. 2
(4) Measured at 1MHZ
(2) Mounted on 5.0mm2 copper pads to each terminal
(5) Peak pulse power waveform is 10/1000
s.
(3) Lead temperature at 75OC = TL
0.157 (3.99)
0.177 (4.50)
0.006 (0.152)
0.012 (0.305)
0.030 (0.76)
0.060 (1.52)
0.008 (0.203) MAX.
0.194 (4.93)
0.208 (5.28)
0.100 (2.54)
0.110 (2.79)
0.078 (1.98)
0.090 (2.29)
0.049 (1.25)
0.065 (1.65)
Cathode Band
DO-214AC
(SMA)
Dimensions in inches
and (millimeters)
0.060 MIN
(1.52 MIN)
0.050 MIN
(1.27 MIN)
0.220 REF
(5.58)
0.094 MAX
(2.38 MAX)
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Protects power IC controllers such as TOPSwitch
Glass passivated junction
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Excellent clamping capability
Available in unidirectional only
Mounting Pad Layout
Steady State Power 1W
Peak Pulse Power 300W
Reverse Voltage 530,550V
Mechanical Data
Case: JEDEC DO-214AC molded plastic body over
passivated chip
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: The band denotes the cathode, which is positive with
respect to the anode under normal TVS operation
Mounting Position: Any Weight: 0.002oz., 0.064g
Packaging Codes – Options (Antistatic):
51 – 1K per Bulk box, 20K/carton
61 – 1.8K per 7” plastic Reel (12mm tape), 36K/carton
5A – 7.5K per 13” plastic Reel (12mm tape), 75K/carton
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SMAJ530-E3/11 | 制造商:Vishay Angstrohm 功能描述:Diode TVS Single Uni-Dir 477V 300W 2-Pin SMA T/R |
| SMAJ530-E3/2G | 功能描述:TVS 二极管 - 瞬态电压抑制器 300W 530V 10% Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMAJ530-E3/5A | 功能描述:TVS 二极管 - 瞬态电压抑制器 300W 530V 10% Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMAJ530-E3/61 | 功能描述:TVS 二极管 - 瞬态电压抑制器 300W 530V 10% Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMAJ530-E3/63 | 功能描述:TVS 二极管 - 瞬态电压抑制器 300W 530V 10% Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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