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参数资料
| 型号： | SMAJ550/61 |
| 厂商： | GENERAL SEMICONDUCTOR INC |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC |
| 封装： | PLASTIC, SMA, 2 PIN |
| 文件页数： | 2/2页 |
| 文件大小： | 25K |
| 代理商： | SMAJ550/61 |
Part Number
Vishay Semiconductor
www.vishay.com
Document Number #####
2
14-Dec-01
Application Notes
Respect Thermal Resistance (PCB Layout) – as the temperature coefficient also contributes to the clamping voltage.
Select minimum breakdown voltage, so you get acceptable power dissipation and PCB tie point temperature.
Devices with higher breakdown voltage will have a shorter conduction time and will dissipate less power.
Clamping voltage is influenced by internal resistance – design approximation is 7V per 100mA slope.
Keep temperature of TVS lower than TOPSwitch as a recommendation.
Maximum current is determined by the maximum TJ and can be higher than 300mA.
Contact supplier for different clamping voltage / current arrangements.
Minimum breakdown voltage can be customized for other applications. Contact supplier.
TOPSwitch is a registered trademark of Power Integrations, Inc.
0
25
50
75
100
0
75
25
50
100
125
150
175
P
eak
Pulse
P
o
w
er
(P
PP
)or
Current
(I
PP
)
Der
ating
in
P
ercentage
,%
TA – Ambient Temperature (
°C)
Fig. 2 – Pulse Derating Curve
P
PPM
–
P
eak
Pulse
P
o
w
er
(kW)
Fig. 1 – Peak Pulse Power Rating Curve
0.1
1
10
100
0.1
s
1.0
s10s
td – Pulse Width (sec.)
100
s
1.0ms
10ms
Non-repetitive Pulse
Waveform shown in Fig. 3
TA = 25°C
0
50
100
150
I PPM
–
P
eak
Pulse
Current,
%
I
RSM
Fig. 3 – Pulse Waveform
TJ = 25
°C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of IPPM
tr = 10
sec.
Peak Value
IPPM
Half Value – IPP
IPPM
2
td
10/1000
sec. Waveform
as defined by R.E.A.
0
1.0
2.0
3.0
4.0
t – Time (ms)
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
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相关代理商/技术参数 |
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| SMAJ550-E3/1 | 功能描述:TVS 二极管 - 瞬态电压抑制器 400W 550V 10% Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMAJ550-E3/2G | 功能描述:TVS 二极管 - 瞬态电压抑制器 300W 550V 10% Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMAJ550-E3/51 | 功能描述:TVS 二极管 - 瞬态电压抑制器 300W 550V 10% Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMAJ550-E3/5A | 功能描述:TVS 二极管 - 瞬态电压抑制器 300W 550V 10% Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMAJ550-E3/61 | 功能描述:TVS 二极管 - 瞬态电压抑制器 300W 550V 10% Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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